UNSPECIFIED (1993) SCATTERING MECHANISMS AFFECTING HOLE TRANSPORT IN REMOTE-DOPED SI/SIGE HETEROSTRUCTURES. JOURNAL OF APPLIED PHYSICS, 73 (8). pp. 3852-3856. ISSN 0021-8979

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Abstract

Boron modulation-doped Si/SiGe heterojunctions have been grown by molecular beam epitaxy. The two-dimensional hole gas formed along the heterojunction, just inside the alloy, has a sheet density in the range 2-5 X 10(11) CM-2 and a typical mobility at 5 K of 2000 cm2 V-1 s-1. An explanation for the magnitude of the mobility is sought by considering likely scattering mechanisms, namely those due to remote impurities, interface roughness, alloy disorder, and interface impurities. A self-consistent model is used to determine the sheet density in terms of structural and energy parameters and dopant concentrations in the heterostructure. It is shown that the presence of negatively charged impurities at the heterojunction provides the basis for a consistent interpretation of the experimental results.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	JOURNAL OF APPLIED PHYSICS
Publisher:	AMER INST PHYSICS
ISSN:	0021-8979
Date:	15 April 1993
Volume:	73
Number:	8
Number of Pages:	5
Page Range:	pp. 3852-3856
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/21383

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