SCATTERING MECHANISMS AFFECTING HOLE TRANSPORT IN REMOTE-DOPED SI/SIGE HETEROSTRUCTURES
UNSPECIFIED (1993) SCATTERING MECHANISMS AFFECTING HOLE TRANSPORT IN REMOTE-DOPED SI/SIGE HETEROSTRUCTURES. JOURNAL OF APPLIED PHYSICS, 73 (8). pp. 3852-3856. ISSN 0021-8979Full text not available from this repository.
Boron modulation-doped Si/SiGe heterojunctions have been grown by molecular beam epitaxy. The two-dimensional hole gas formed along the heterojunction, just inside the alloy, has a sheet density in the range 2-5 X 10(11) CM-2 and a typical mobility at 5 K of 2000 cm2 V-1 s-1. An explanation for the magnitude of the mobility is sought by considering likely scattering mechanisms, namely those due to remote impurities, interface roughness, alloy disorder, and interface impurities. A self-consistent model is used to determine the sheet density in terms of structural and energy parameters and dopant concentrations in the heterostructure. It is shown that the presence of negatively charged impurities at the heterojunction provides the basis for a consistent interpretation of the experimental results.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF APPLIED PHYSICS|
|Publisher:||AMER INST PHYSICS|
|Date:||15 April 1993|
|Number of Pages:||5|
|Page Range:||pp. 3852-3856|
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