END-POINT DETECTION USING ABSORBED CURRENT, SECONDARY-ELECTRON, AND SECONDARY ION SIGNALS DURING MILLING OF MULTILAYER STRUCTURES BY FOCUSED ION-BEAM
UNSPECIFIED. (1993) END-POINT DETECTION USING ABSORBED CURRENT, SECONDARY-ELECTRON, AND SECONDARY ION SIGNALS DURING MILLING OF MULTILAYER STRUCTURES BY FOCUSED ION-BEAM. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 11 (2). pp. 263-267. ISSN 1071-1023Full text not available from this repository.
Many applications of focused ion beam micromachining of multilayer structures require the ability to accurately and unambiguously signal the transition from one layer to the next during milling. Instances where this may be critical include most microcircuit sectioning, reconfiguring, or repair operations. Here we compare absorbed specimen current with secondary electron and secondary ion signals and contrast their effectiveness in providing an indication of end-point. A number of thin film and multilayer samples have been investigated including thin films of Au and W (thickness 0.1 mum) deposited on Si, and Al (thickness 1.0 mum) deposited on thermally grown SiO2 (thickness 1.0 mum) on Si.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B|
|Publisher:||AMER INST PHYSICS|
|Official Date:||March 1993|
|Number of Pages:||5|
|Page Range:||pp. 263-267|
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