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LOW-TEMPERATURE TRANSPORT IN SI-SB ULTRA-THIN DOPING LAYERS

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UNSPECIFIED (1993) LOW-TEMPERATURE TRANSPORT IN SI-SB ULTRA-THIN DOPING LAYERS. JOURNAL OF PHYSICS-CONDENSED MATTER, 5 (14). L201-L206.

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Abstract

We present the results of low-temperature transport measurements on 'metallic' Si:Sb doping layers with nominal widths of 10 nm, 20 nm and 80 nm. There is clear evidence of weak localization and interaction corrections to the transport coefficients and for a 3D to 2D transition as the layer width decreases-the first observation of these effects in this system. Of particular interest is the fact that the experimental results are in good quantitative agreement with most aspects of the theory, despite the highly disordered and multi-sub-band nature of the samples.

Item Type: Journal Item
Subjects: Q Science > QC Physics
Journal or Publication Title: JOURNAL OF PHYSICS-CONDENSED MATTER
Publisher: IOP PUBLISHING LTD
ISSN: 0953-8984
Official Date: 5 April 1993
Dates:
DateEvent
5 April 1993UNSPECIFIED
Volume: 5
Number: 14
Number of Pages: 6
Page Range: L201-L206
Publication Status: Published

Data sourced from Thomson Reuters' Web of Knowledge

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