UNSPECIFIED (1993) DISLOCATION IMAGING USING TRANSMISSION ION CHANNELING. JOURNAL OF APPLIED PHYSICS, 73 (6). pp. 2640-2653. ISSN 0021-8979

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Abstract

Interface dislocations present in a Si0.85Ge0.15/Si sample have been imaged using the channeling scanning transmission ion microscopy (CSTIM) method with a 2 MeV proton beam 200 nm across. Groups of parallel dislocations gave dark bands of contrast down to approximately 1.5 mum across, the contrast arising from dechanneling of the beam by the bent lattice planes. Tilting of the sample caused the band contrast to change and gave quantitative data concerning the local bending of the lattice planes. A low-angle boundary model was developed to describe the effect of the groups of dislocations on the channeling contrast. Channeling and topography contrast were obtained from mesa structures present on the sample. Improvements in the sensitivity of the CSTIM method are discussed. The dislocations in the sample were initially characterized by transmission electron microscopy.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	JOURNAL OF APPLIED PHYSICS
Publisher:	AMER INST PHYSICS
ISSN:	0021-8979
Date:	15 March 1993
Volume:	73
Number:	6
Number of Pages:	14
Page Range:	pp. 2640-2653
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/21454

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