MAGNETOTHERMOPOWER IN SILICON MOSFETS
UNSPECIFIED (1993) MAGNETOTHERMOPOWER IN SILICON MOSFETS. JOURNAL OF PHYSICS-CONDENSED MATTER, 5 (9). pp. 1355-1364. ISSN 0953-8984Full text not available from this repository.
The phonon drag and electronic diffusion contributions to the tensor M which determines the heat flux U = M . E is calculated for a two-dimensional electron gas in a perpendicular magnetic field B. The drag component is obtained using Boltzmann transport and diffusion is included using the lowest-order cumulant approximation to describe scattering between Landau states with different orbit centres. The 2D Landau levels have Gaussian model lineshapes with RMS width gamma = CB1/2 which is the only adjustable parameter. At temperature T = 5.02 K, drag dominates the predicted M(yx)(B) values which are in good agreement with new data for Si MOSFETS taking C = 0.6 meV T-1/2. The calculated M(xx) values are in worse accord with the data because the predicted drag contribution M(xx)g is zero. Both M(xx) and M(yx) reveal magneto-oscillations originating from fluctuations in the density of states at the Fermi level. We show that at T = 5.02 K, setting M(xx)g = 0 has little effect on the accuracy of the magnetothermopower S(xx) (B) but yields poor approximations to the off-diagonal term S(yx)(B). At T = 1.47 K, these thermopower components are diffusion-dominated. The predicted values are comparable to experiment although the magneto-oscillations are overemphasized in S(yx) and underestimated in S(xx).
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF PHYSICS-CONDENSED MATTER|
|Publisher:||IOP PUBLISHING LTD|
|Date:||1 March 1993|
|Number of Pages:||10|
|Page Range:||pp. 1355-1364|
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