UNSPECIFIED (1993) IMAGING ION-BOMBARDED III-V SEMICONDUCTOR SURFACES - A SCANNING TUNNELING MICROSCOPY STUDY OF INSB(100). In: 6TH INTERNATIONAL CONF ON NARROW GAP SEMICONDUCTORS, JUL 19-23, 1992, SOUTHAMPTON, ENGLAND.

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Abstract

Scanning tunnelling microscopy (STM) has been used to produce images of InSb(100) prepared by in situ treatment of several cycles of low-energy argon ion bombardment and annealing. Electron diffraction studies, following annealing to 625 K, show the c(8 x 2) pattern associated with the In-rich reconstruction also observed during MBE growth. These STM images demonstrate the improved surface ordering with successive cycles resulting in atomically flat terraces over areas of the sample in excess of 1000 angstrom x 1000 angstrom. The observed reduction of macroscopic morphological defects, such as In droplets, is discussed as a function of surface treatment.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher:	IOP PUBLISHING LTD
ISSN:	0268-1242
Date:	January 1993
Volume:	8
Number:	1 Suppl. S
Number of Pages:	3
Page Range:	S342-S344
Publication Status:	Published
Title of Event:	6TH INTERNATIONAL CONF ON NARROW GAP SEMICONDUCTORS
Location of Event:	SOUTHAMPTON, ENGLAND
Date(s) of Event:	JUL 19-23, 1992
URI:	http://wrap.warwick.ac.uk/id/eprint/21533

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