IMAGING ION-BOMBARDED III-V SEMICONDUCTOR SURFACES - A SCANNING TUNNELING MICROSCOPY STUDY OF INSB(100)
UNSPECIFIED (1993) IMAGING ION-BOMBARDED III-V SEMICONDUCTOR SURFACES - A SCANNING TUNNELING MICROSCOPY STUDY OF INSB(100). In: 6TH INTERNATIONAL CONF ON NARROW GAP SEMICONDUCTORS, SOUTHAMPTON, ENGLAND, JUL 19-23, 1992. Published in: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 (1 Suppl. S). S342-S344.Full text not available from this repository.
Scanning tunnelling microscopy (STM) has been used to produce images of InSb(100) prepared by in situ treatment of several cycles of low-energy argon ion bombardment and annealing. Electron diffraction studies, following annealing to 625 K, show the c(8 x 2) pattern associated with the In-rich reconstruction also observed during MBE growth. These STM images demonstrate the improved surface ordering with successive cycles resulting in atomically flat terraces over areas of the sample in excess of 1000 angstrom x 1000 angstrom. The observed reduction of macroscopic morphological defects, such as In droplets, is discussed as a function of surface treatment.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||SEMICONDUCTOR SCIENCE AND TECHNOLOGY|
|Publisher:||IOP PUBLISHING LTD|
|Number:||1 Suppl. S|
|Number of Pages:||3|
|Title of Event:||6TH INTERNATIONAL CONF ON NARROW GAP SEMICONDUCTORS|
|Location of Event:||SOUTHAMPTON, ENGLAND|
|Date(s) of Event:||JUL 19-23, 1992|
Actions (login required)