Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

DAMAGE-INDUCED CHANGES IN THE ELECTRONIC-PROPERTIES OF INSB(100) - IMPLICATIONS FOR SURFACE PREPARATION

Tools
- Tools
+ Tools

UNSPECIFIED (1993) DAMAGE-INDUCED CHANGES IN THE ELECTRONIC-PROPERTIES OF INSB(100) - IMPLICATIONS FOR SURFACE PREPARATION. In: 6TH INTERNATIONAL CONF ON NARROW GAP SEMICONDUCTORS, SOUTHAMPTON, ENGLAND, JUL 19-23, 1992. Published in: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 (1 Suppl. S). S396-S399. ISSN 0268-1242.

Research output not available from this repository, contact author.

Request Changes to record.

Abstract

A combination of surface-sensitive techniques and electron transport measurements have been used to characterize the effect of argon ion bombardment and annealing on a series of InSb(100) samples. Ex situ electrical conductivity and magnetoresistance measurements at 4.2 K, and in situ high-resolution electron energy loss spectroscopy (HREELS) carried out at 300 K, indicate that all the samples studied exhibit enhanced n-type behaviour after the surface cleaning procedure. This effect is most pronounced after annealing to between 450 and 500 K and arises from the formation of a high-density electron gas with a sheet carrier concentration of approximately (6.5-9. 0) X 10(12) CM-2. The carrier concentration is significantly reduced on annealing to higher temperatures up to a maximum of 700 K. Electron-energy-dependent HREELS measurements of the plasmon energy and intensity, in conjunction with model calculations based on dielectric theory, indicate that the n-type layer is approximately 500 angstrom thick and located approximately 175 angstrom below a surface depletion layer. The occupancy of the electronic subbands has been obtained by Shubnikov de Haas measurements and self-consistent calculations. These show that the positive charge which confines the electrons is spread over approximately 300 angstrom with a best fit being provided by a Gaussian-like potential profile. The calculations demonstrate that the corresponding wavefunction spread for the i = 0 subband, which contains approximately 40% of the total carriers induced, has a spatial dimension of approximately 500 angstrom in good agreement with the HREELs results.

Item Type: Conference Item (UNSPECIFIED)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Journal or Publication Title: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher: IOP PUBLISHING LTD
ISSN: 0268-1242
Official Date: January 1993
Dates:
DateEvent
January 1993UNSPECIFIED
Volume: 8
Number: 1 Suppl. S
Number of Pages: 4
Page Range: S396-S399
Publication Status: Published
Title of Event: 6TH INTERNATIONAL CONF ON NARROW GAP SEMICONDUCTORS
Location of Event: SOUTHAMPTON, ENGLAND
Date(s) of Event: JUL 19-23, 1992

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us