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DAMAGE-INDUCED CHANGES IN THE ELECTRONIC-PROPERTIES OF INSB(100) - IMPLICATIONS FOR SURFACE PREPARATION
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UNSPECIFIED (1993) DAMAGE-INDUCED CHANGES IN THE ELECTRONIC-PROPERTIES OF INSB(100) - IMPLICATIONS FOR SURFACE PREPARATION. In: 6TH INTERNATIONAL CONF ON NARROW GAP SEMICONDUCTORS, SOUTHAMPTON, ENGLAND, JUL 19-23, 1992. Published in: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 (1 Suppl. S). S396-S399. ISSN 0268-1242.
Full text not available from this repository, contact author.Abstract
A combination of surface-sensitive techniques and electron transport measurements have been used to characterize the effect of argon ion bombardment and annealing on a series of InSb(100) samples. Ex situ electrical conductivity and magnetoresistance measurements at 4.2 K, and in situ high-resolution electron energy loss spectroscopy (HREELS) carried out at 300 K, indicate that all the samples studied exhibit enhanced n-type behaviour after the surface cleaning procedure. This effect is most pronounced after annealing to between 450 and 500 K and arises from the formation of a high-density electron gas with a sheet carrier concentration of approximately (6.5-9. 0) X 10(12) CM-2. The carrier concentration is significantly reduced on annealing to higher temperatures up to a maximum of 700 K. Electron-energy-dependent HREELS measurements of the plasmon energy and intensity, in conjunction with model calculations based on dielectric theory, indicate that the n-type layer is approximately 500 angstrom thick and located approximately 175 angstrom below a surface depletion layer. The occupancy of the electronic subbands has been obtained by Shubnikov de Haas measurements and self-consistent calculations. These show that the positive charge which confines the electrons is spread over approximately 300 angstrom with a best fit being provided by a Gaussian-like potential profile. The calculations demonstrate that the corresponding wavefunction spread for the i = 0 subband, which contains approximately 40% of the total carriers induced, has a spatial dimension of approximately 500 angstrom in good agreement with the HREELs results.
| Item Type: | Conference Item (UNSPECIFIED) | ||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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| Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
| Publisher: | IOP PUBLISHING LTD | ||||
| ISSN: | 0268-1242 | ||||
| Official Date: | January 1993 | ||||
| Dates: |
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| Volume: | 8 | ||||
| Number: | 1 Suppl. S | ||||
| Number of Pages: | 4 | ||||
| Page Range: | S396-S399 | ||||
| Publication Status: | Published | ||||
| Title of Event: | 6TH INTERNATIONAL CONF ON NARROW GAP SEMICONDUCTORS | ||||
| Location of Event: | SOUTHAMPTON, ENGLAND | ||||
| Date(s) of Event: | JUL 19-23, 1992 |
Data sourced from Thomson Reuters' Web of Knowledge
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