DAMAGE-INDUCED CHANGES IN THE ELECTRONIC-PROPERTIES OF INSB(100) - IMPLICATIONS FOR SURFACE PREPARATION
UNSPECIFIED (1993) DAMAGE-INDUCED CHANGES IN THE ELECTRONIC-PROPERTIES OF INSB(100) - IMPLICATIONS FOR SURFACE PREPARATION. In: 6TH INTERNATIONAL CONF ON NARROW GAP SEMICONDUCTORS, SOUTHAMPTON, ENGLAND, JUL 19-23, 1992. Published in: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 (1 Suppl. S). S396-S399.Full text not available from this repository.
A combination of surface-sensitive techniques and electron transport measurements have been used to characterize the effect of argon ion bombardment and annealing on a series of InSb(100) samples. Ex situ electrical conductivity and magnetoresistance measurements at 4.2 K, and in situ high-resolution electron energy loss spectroscopy (HREELS) carried out at 300 K, indicate that all the samples studied exhibit enhanced n-type behaviour after the surface cleaning procedure. This effect is most pronounced after annealing to between 450 and 500 K and arises from the formation of a high-density electron gas with a sheet carrier concentration of approximately (6.5-9. 0) X 10(12) CM-2. The carrier concentration is significantly reduced on annealing to higher temperatures up to a maximum of 700 K. Electron-energy-dependent HREELS measurements of the plasmon energy and intensity, in conjunction with model calculations based on dielectric theory, indicate that the n-type layer is approximately 500 angstrom thick and located approximately 175 angstrom below a surface depletion layer. The occupancy of the electronic subbands has been obtained by Shubnikov de Haas measurements and self-consistent calculations. These show that the positive charge which confines the electrons is spread over approximately 300 angstrom with a best fit being provided by a Gaussian-like potential profile. The calculations demonstrate that the corresponding wavefunction spread for the i = 0 subband, which contains approximately 40% of the total carriers induced, has a spatial dimension of approximately 500 angstrom in good agreement with the HREELs results.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||SEMICONDUCTOR SCIENCE AND TECHNOLOGY|
|Publisher:||IOP PUBLISHING LTD|
|Number:||1 Suppl. S|
|Number of Pages:||4|
|Title of Event:||6TH INTERNATIONAL CONF ON NARROW GAP SEMICONDUCTORS|
|Location of Event:||SOUTHAMPTON, ENGLAND|
|Date(s) of Event:||JUL 19-23, 1992|
Actions (login required)