UNSPECIFIED (1993) OPTICAL-PROPERTIES OF SI/SI1-XGEX HETEROSTRUCTURE BASED WIRES. SOLID STATE COMMUNICATIONS, 85 (3). pp. 199-202. ISSN 0038-1098

Full text not available from this repository.

Abstract

We report for the first time a study of the optical properties of nanostructured wires fabricated by using electron beam lithography and reactive ion etching in SiCl4 from a modulation doped p+-Si/Si1-xGex heterojunction structure. Both photoreflectance and photoluminescence at 4K show a fabrication process-induced partial strain relaxation and a quasi-one dimensional (1D) behavior when the wire width.reduces to less than about 40nm. A strong emission from electron-hole droplets in the quasi-1D wires is also detected.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	SOLID STATE COMMUNICATIONS
Publisher:	PERGAMON-ELSEVIER SCIENCE LTD
ISSN:	0038-1098
Date:	January 1993
Volume:	85
Number:	3
Number of Pages:	4
Page Range:	pp. 199-202
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/21572

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item