ADVANCED X-RAY-SCATTERING TECHNIQUES FOR THE CHARACTERIZATION OF SEMICONDUCTING MATERIALS
UNSPECIFIED (1993) ADVANCED X-RAY-SCATTERING TECHNIQUES FOR THE CHARACTERIZATION OF SEMICONDUCTING MATERIALS. In: INTERNATIONAL WORKSHOP ON CHARACTERIZATION OF SEMICONDUCTOR SUBSTRATES AND STRUCTURES, APR 01-04, 1992, SMOLENICE, CZECHOSLOVAKIA.Full text not available from this repository.
The application of high resolution X-ray scattering to the characterization of single crystal semiconductors is reviewed. Double and triple axis diffraction are discussed and the present limits of their sensitivity are explored. Information from these diffraction techniques is contrasted with that obtained by grazing incidence X-ray reflectance measurements. It is shown that X-ray topographic methods, which provide a two-dimensional map of the lattice strains complement the information gained by the above area-integrated techniques.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QD Chemistry|
|Journal or Publication Title:||JOURNAL OF CRYSTAL GROWTH|
|Publisher:||ELSEVIER SCIENCE BV|
|Number of Pages:||18|
|Page Range:||pp. 1-18|
|Title of Event:||INTERNATIONAL WORKSHOP ON CHARACTERIZATION OF SEMICONDUCTOR SUBSTRATES AND STRUCTURES|
|Location of Event:||SMOLENICE, CZECHOSLOVAKIA|
|Date(s) of Event:||APR 01-04, 1992|
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