UNSPECIFIED (1993) ADVANCED X-RAY-SCATTERING TECHNIQUES FOR THE CHARACTERIZATION OF SEMICONDUCTING MATERIALS. In: INTERNATIONAL WORKSHOP ON CHARACTERIZATION OF SEMICONDUCTOR SUBSTRATES AND STRUCTURES, APR 01-04, 1992, SMOLENICE, CZECHOSLOVAKIA.

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Abstract

The application of high resolution X-ray scattering to the characterization of single crystal semiconductors is reviewed. Double and triple axis diffraction are discussed and the present limits of their sensitivity are explored. Information from these diffraction techniques is contrasted with that obtained by grazing incidence X-ray reflectance measurements. It is shown that X-ray topographic methods, which provide a two-dimensional map of the lattice strains complement the information gained by the above area-integrated techniques.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QD Chemistry
Journal or Publication Title:	JOURNAL OF CRYSTAL GROWTH
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0022-0248
Date:	January 1993
Volume:	126
Number:	1
Number of Pages:	18
Page Range:	pp. 1-18
Publication Status:	Published
Title of Event:	INTERNATIONAL WORKSHOP ON CHARACTERIZATION OF SEMICONDUCTOR SUBSTRATES AND STRUCTURES
Location of Event:	SMOLENICE, CZECHOSLOVAKIA
Date(s) of Event:	APR 01-04, 1992
URI:	http://wrap.warwick.ac.uk/id/eprint/21576

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