UNSPECIFIED (1993) TRANSCONDUCTANCE AND MOBILITY OF SIB DELTA MOSFETS. IEEE TRANSACTIONS ON ELECTRON DEVICES, 40 (1). pp. 157-162. ISSN 0018-9383.

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Abstract

Delta-doped MOSFET's have been fabricated in MBE-grown silicon using for the first time boron as the dopant within the delta layer. Current-voltage characteristics have been measured, and secondary ion mass spectrometry (SIMS) is used to confirm the location of the delta layer and the extent of layer broadening by diffusion during processing. Precise threshold voltages of the devices are difficult to determine since the devices (which all operate in depletion mode) take several volts to switch off. Transconductances of the devices have been measured, and it is shown how analysis of these results can yield estimates of the carrier mobility for transport along the delta layers despite the uncertainty in the threshold voltage. A clear transition is observed in the results which is attributed to the formation of a parasitic surface-channel field-effect transistor, providing conclusive evidence that the devices are conducting along a delta channel for part of the measured range of applied gate biases.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Journal or Publication Title:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN:	0018-9383
Official Date:	January 1993
Dates:	Date Event January 1993 UNSPECIFIED
Volume:	40
Number:	1
Number of Pages:	6
Page Range:	pp. 157-162
Publication Status:	Published

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