UNSPECIFIED (1992) MAGNETIC-FIELD-INDUCED METAL-INSULATOR-TRANSITION IN SI-B-DELTA LAYERS. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 66 (3). pp. 379-389. ISSN 0141-8637

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Abstract

The magnetoresistance of Si: B delta layers of sheet concentrations 2 x 10(13) to 8 x 10(13) cm-2 has been measured at temperatures down to 0.3 K and in fields up to 12 T both parallel and perpendicular to the 2D hole gas. The results have been compared with the weak localization theory incorporating spin-orbit scattering, and with the Zeeman and orbital terms in the interaction theory. It is concluded that a promising alternative explanation of the results is to be found in the concept of wavefunction shrinkage, a metal-insulator transition to a strongly localized state being produced by the magnetic field. The logarithm of the sheet resistance is found to vary as B1/2 for fields above 5 T at a fixed temperature and as T-1/2 at 12 T, in agreement with recent theories of variable-range hopping.

Item Type:	Journal Article
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) T Technology > TJ Mechanical engineering and machinery Q Science > QC Physics
Journal or Publication Title:	PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
Publisher:	TAYLOR & FRANCIS LTD
ISSN:	0141-8637
Date:	September 1992
Volume:	66
Number:	3
Number of Pages:	11
Page Range:	pp. 379-389
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/21815

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