MAGNETIC-FIELD-INDUCED METAL-INSULATOR-TRANSITION IN SI-B-DELTA LAYERS
UNSPECIFIED (1992) MAGNETIC-FIELD-INDUCED METAL-INSULATOR-TRANSITION IN SI-B-DELTA LAYERS. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 66 (3). pp. 379-389. ISSN 0141-8637Full text not available from this repository.
The magnetoresistance of Si: B delta layers of sheet concentrations 2 x 10(13) to 8 x 10(13) cm-2 has been measured at temperatures down to 0.3 K and in fields up to 12 T both parallel and perpendicular to the 2D hole gas. The results have been compared with the weak localization theory incorporating spin-orbit scattering, and with the Zeeman and orbital terms in the interaction theory. It is concluded that a promising alternative explanation of the results is to be found in the concept of wavefunction shrinkage, a metal-insulator transition to a strongly localized state being produced by the magnetic field. The logarithm of the sheet resistance is found to vary as B1/2 for fields above 5 T at a fixed temperature and as T-1/2 at 12 T, in agreement with recent theories of variable-range hopping.
|Item Type:||Journal Article|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TJ Mechanical engineering and machinery
Q Science > QC Physics
|Journal or Publication Title:||PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES|
|Publisher:||TAYLOR & FRANCIS LTD|
|Number of Pages:||11|
|Page Range:||pp. 379-389|
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