UNSPECIFIED (1991) GERMANIUM CONCENTRATION PROFILING OF SI/GEXSI1-X HETEROSTRUCTURES BY ANODIC-DISSOLUTION. [Journal Item]

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Abstract

Comparison between the variation in anodic dissolution current during etching of p-type and undoped Si/GexSi1-x (x less-than-or-equal-to 0.24) structures and Ge composition profiles indicates a correlation between the change in etch current and Ge content. The optimal choice of electrolyte and etching conditions is reported. These preliminary results indicate that the Ge content can be determined from the etch current profile with an accuracy of +/- 15% in x at a depth resolution of 10 nm. This technique represents a simple, rapid method of Ge profiling through arbitray-composition structures.

Item Type:	Journal Item
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher:	IOP PUBLISHING LTD
ISSN:	0268-1242
Date:	December 1991
Volume:	6
Number:	12
Number of Pages:	3
Page Range:	pp. 1175-1177
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/22132

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