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STRAIN RELAXATION IN SI1-XGEX LAYERS ON SI(001)
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UNSPECIFIED (1992) STRAIN RELAXATION IN SI1-XGEX LAYERS ON SI(001). JOURNAL OF CRYSTAL GROWTH, 116 (3-4). pp. 260-270. ISSN 0022-0248.
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Abstract
The lattice relaxation of strained Si1-xGex layers on Si (001) substrates has been examined. Three specimens consisting of a single Si1-xGex layer were grown by molecular beam epitaxy. All layers were grown with a nominal composition of x = 0.14 to thicknesses of 0.5, 1.0 or 1.5-mu-m. Double-crystal and white-radiation topographic methods were used to reveal the misfit dislocation structure and distribution. The misfit dislocations were shown to extend from heterogeneous nucleation sites along the [110] directions in the plane of the interface. A symmetric distribution of dislocations between the orthogonal [110] directions was observed. The Burgers vectors of the misfit dislocation array were evenly distributed amongst the available 60-degrees-type candidates. Double-crystal X-ray diffractometry showed the 0.5 and 1.0-mu-m layers to be fully strained to within the experimental uncertainty. Secondary branching of misfit dislocations was observed in the 1.0-mu-m layer which indicated cross-slip of the threading dislocation segments.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QD Chemistry | ||||
Journal or Publication Title: | JOURNAL OF CRYSTAL GROWTH | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0022-0248 | ||||
Official Date: | February 1992 | ||||
Dates: |
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Volume: | 116 | ||||
Number: | 3-4 | ||||
Number of Pages: | 11 | ||||
Page Range: | pp. 260-270 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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