The Library
SI0.57GE0.43 ALLOY LAYERS IMPLANTED WITH OXYGEN - SPUTTERING YIELDS AND ATOMIC COMPOSITION DEPTH PROFILES
Tools
UNSPECIFIED (1992) SI0.57GE0.43 ALLOY LAYERS IMPLANTED WITH OXYGEN - SPUTTERING YIELDS AND ATOMIC COMPOSITION DEPTH PROFILES. In: SYMP OF THE 1991 SPRING MEETING OF THE EUROPEAN MATERIALS RESEARCH SOC : HIGH ENERGY ION IMPLANTATION, STRASBOURG, FRANCE, MAY 28-30, 1991. Published in: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 62 (3). pp. 325-330. ISSN 0168-583X.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Abstract
Si0.57Ge0.43 alloy layers implanted with O+ ions have been investigated by Rutherford backscattering spectrometry. The layers of 550 mm thickness were grown by molecular beam epitaxy on a n-type (100) Si substrate (rho = 5-20 OMEGA cm). The samples were subsequently implanted with 200 keV O+ ions to doses of 0.6 x 10(18), 1.2 x 10(18) and 1.8 x 10(18) O+ cm-2 at a substrate temperature of about 500-degrees-C.
Experimental sputtering yields and atomic composition depth profiles were determined by making comparisons of the spectra of Rutherford backscattering spectrometry collected before and after implantation. We find no evidence for preferential sputtering as the ratio (1.36) of the experimental rates of 0.15 Si atoms/ion (+ 10%) and 0.11 Ge atoms/ion (1 10%) compares well with the ratio of the alloy composition (1.33) of the samples. Similar values for the sputter rates, calculated by the computer simulation (TRIM), have been achieved by optimising the values of surface binding energy and lattice binding energy to 3 eV and 1.5 eV, respectively.
The depth profiles of Si, Ge and O have been calculated from the spectra of Rutherford backscattering spectrometry and the procedure used for this three element system is described. The O distribution is a skew Gaussian at low doses whilst for the highest dose it is flat topped and broad.
Item Type: | Conference Item (UNSPECIFIED) | ||||
---|---|---|---|---|---|
Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0168-583X | ||||
Official Date: | January 1992 | ||||
Dates: |
|
||||
Volume: | 62 | ||||
Number: | 3 | ||||
Number of Pages: | 6 | ||||
Page Range: | pp. 325-330 | ||||
Publication Status: | Published | ||||
Title of Event: | SYMP OF THE 1991 SPRING MEETING OF THE EUROPEAN MATERIALS RESEARCH SOC : HIGH ENERGY ION IMPLANTATION | ||||
Location of Event: | STRASBOURG, FRANCE | ||||
Date(s) of Event: | MAY 28-30, 1991 |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |