TEMPERATURE-DEPENDENT PLASMONS IN INSB
UNSPECIFIED (1991) TEMPERATURE-DEPENDENT PLASMONS IN INSB. In: 9TH INTERDISCIPLINARY SURFACE SCIENCE CONF ( ISSC-9 ), APR 22-24, 1991, SOUTHAMPTON, ENGLAND.Full text not available from this repository.
The temperature dependence of the conduction-band plasmon excitation in doped InSb has been measured by high-resolution electron energy loss spectroscopy (HREELS). Previous measurements, carried out at 300 K, have shown that preparation of the (100) surface of p-type InSb, by low-energy ion bombardment and annealing, leads to a near-surface region having a so-called depletion layer of approximately 200 angstrom caused by Fermi level pinning at the surface. Below this, an n-type layer extends a further 500 angstrom into the material arising because of the ion-induced damage. Measurements of the plasmon energy reported here indicate an asymmetric broadening giving rise to an apparent shift of about 7 meV to lower energy as the surface temperature is raised from about 200-470 K. More significant is a large increase in the intensity of the plasmon between 300 and 470 K. By using model calculations, based on dielectric theory, we interpret these results in terms of an increased contribution to the conduction-band free-carrier concentration leading to a reduction in the thickness of the depletion layer.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF PHYSICS-CONDENSED MATTER|
|Publisher:||IOP PUBLISHING LTD|
|Number of Pages:||6|
|Title of Event:||9TH INTERDISCIPLINARY SURFACE SCIENCE CONF ( ISSC-9 )|
|Location of Event:||SOUTHAMPTON, ENGLAND|
|Date(s) of Event:||APR 22-24, 1991|
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