The Library
AN INVESTIGATION OF THE DIFFUSION OF SILICON IN DELTA-DOPED GALLIUM-ARSENIDE, AS DETERMINED USING HIGH-RESOLUTION SECONDARY ION MASS-SPECTROMETRY
Tools
Tools
Tools
UNSPECIFIED. (1991) AN INVESTIGATION OF THE DIFFUSION OF SILICON IN DELTA-DOPED GALLIUM-ARSENIDE, AS DETERMINED USING HIGH-RESOLUTION SECONDARY ION MASS-SPECTROMETRY. JOURNAL OF APPLIED PHYSICS, 70 (2). pp. 821-826. ISSN 0021-8979
Full text not available from this repository.Abstract
Silicon delta-doped samples of various densities were grown by molecular-beam epitaxy and analyzed using high-resolution secondary ion mass spectrometry. A marked difference was observed between profiles produced from samples doped below a surface density of 1.3 x 10(13) cm-2, where all the silicon was incorporated on gallium sites, and highly doped samples, where autocompensation had occurred. All samples were grown at nominally 580-degrees-C and all the doped planes showed some degree of broadening. A computer model of a two-step diffusion process was developed which produced a set of diffusion coefficients for the lower-doped samples. The diffusion coefficient associated with the post deposition growth for these low-doped samples was approximately 4.2 X 10(-17) cm2 s-1. The more highly doped samples, because of their complicated profiles, were modeled using a graphical technique. This technique revealed the presence of a much larger diffusion coefficient, which is tentatively assigned to silicon diffusing as nearest-neighbor pairs.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | JOURNAL OF APPLIED PHYSICS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 0021-8979 |
| Date: | 15 July 1991 |
| Volume: | 70 |
| Number: | 2 |
| Number of Pages: | 6 |
| Page Range: | pp. 821-826 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/22577 |
Data sourced from Thomson Reuters' Web of Knowledge
Actions (login required)
 |
View Item |
