UNSPECIFIED (1991) ELEMENTAL BORON AND ANTIMONY DOPING OF MBE SI AND SIGE STRUCTURES GROWN AT TEMPERATURES BELOW 600-DEGREES-C. In: 6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY, AUG 27-31, 1990, UNIV CALIF SAN DIEGO, LA JOLLA, CA.

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Abstract

This paper considers the low temperature doping of (100) Si and SiGe structures with elemental B and Sb sources particularly with regard to obtaining very narrow delta doping spikes. B is found to be an excellent dopant at SiGe growth temperatures incorporating in an active state at concentrations up to 10%. B delta layers of 1 nm or less have also been grown. Sb is also shown to be capable of providing delta doped layers less than 2 nm wide. The B delta layers have been incorporated into modulation doped structures yielding an order of magnitude increase in mobility at 77 K.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QD Chemistry
Journal or Publication Title:	JOURNAL OF CRYSTAL GROWTH
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0022-0248
Date:	May 1991
Volume:	111
Number:	1-4
Number of Pages:	5
Page Range:	pp. 907-911
Publication Status:	Published
Title of Event:	6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY
Location of Event:	UNIV CALIF SAN DIEGO, LA JOLLA, CA
Date(s) of Event:	AUG 27-31, 1990
URI:	http://wrap.warwick.ac.uk/id/eprint/22642

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