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THE DETERMINATION OF STRAIN IN SI-GE SUPERLATTICES BY ELECTRON-DIFFRACTION IN A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE

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UNSPECIFIED (1991) THE DETERMINATION OF STRAIN IN SI-GE SUPERLATTICES BY ELECTRON-DIFFRACTION IN A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE. In: 6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY, UNIV CALIF SAN DIEGO, LA JOLLA, CA, AUG 27-31, 1990. Published in: JOURNAL OF CRYSTAL GROWTH, 111 (1-4). pp. 925-930. ISSN 0022-0248.

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Abstract

The nanometre scale of the novel strained layer electronic devices now being grown requires characterisation techniques of a corresponding resolution. This work employs the subnanometre probe of a dedicated scanning transmission electron microscope to investigate individual layers in a cross-sectioned SiGe superlattice. Using recently developed instrumentation, microdiffraction patterns have been obtained at very high resolution and the strains in each layer quantified by analysing the position of the deficit higher order Laue zone lines in the zero order beam. The experimental patterns are fitted to computer simulations incorporating possible dynamical effects. The results from a 10 nm SiGe layer are shown to be in good agreement with bulk X-ray diffraction analysis, with an accuracy limited only by the fundamental constraints of diffraction from a laterally finite sample. Hence surface relaxation, a major complication with previous applications of electron microscopy to strain measurement, can be ignored for the specimen geometry that the small probe allows. It is anticipated that the technique can in future be applied to multilayer structures which are not amenable to bulk characterisation.

Item Type: Conference Item (UNSPECIFIED)
Subjects: Q Science > QD Chemistry
Journal or Publication Title: JOURNAL OF CRYSTAL GROWTH
Publisher: ELSEVIER SCIENCE BV
ISSN: 0022-0248
Official Date: May 1991
Dates:
DateEvent
May 1991UNSPECIFIED
Volume: 111
Number: 1-4
Number of Pages: 6
Page Range: pp. 925-930
Publication Status: Published
Title of Event: 6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY
Location of Event: UNIV CALIF SAN DIEGO, LA JOLLA, CA
Date(s) of Event: AUG 27-31, 1990

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