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CONCENTRATION OF ATOMIC-HYDROGEN DIFFUSED INTO SILICON IN THE TEMPERATURE-RANGE 900-1300-DEGREES-C
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UNSPECIFIED (1991) CONCENTRATION OF ATOMIC-HYDROGEN DIFFUSED INTO SILICON IN THE TEMPERATURE-RANGE 900-1300-DEGREES-C. APPLIED PHYSICS LETTERS, 58 (25). pp. 2933-2935. ISSN 0003-6951
Full text not available from this repository.Abstract
Boron-doped Czochralski silicon samples with [B] approximately 10(17) cm-3 have been heated at various temperatures in the range 800-1300-degrees-C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [H(s)] = 5.6 X 10(18) exp( - 0.95 eV/kT)cm-3 at the temperatures investigated.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | APPLIED PHYSICS LETTERS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 0003-6951 |
| Date: | 24 June 1991 |
| Volume: | 58 |
| Number: | 25 |
| Number of Pages: | 3 |
| Page Range: | pp. 2933-2935 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/22651 |
Data sourced from Thomson Reuters' Web of Knowledge
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