CONCENTRATION OF ATOMIC-HYDROGEN DIFFUSED INTO SILICON IN THE TEMPERATURE-RANGE 900-1300-DEGREES-C
UNSPECIFIED (1991) CONCENTRATION OF ATOMIC-HYDROGEN DIFFUSED INTO SILICON IN THE TEMPERATURE-RANGE 900-1300-DEGREES-C. APPLIED PHYSICS LETTERS, 58 (25). pp. 2933-2935. ISSN 0003-6951Full text not available from this repository.
Boron-doped Czochralski silicon samples with [B] approximately 10(17) cm-3 have been heated at various temperatures in the range 800-1300-degrees-C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [H(s)] = 5.6 X 10(18) exp( - 0.95 eV/kT)cm-3 at the temperatures investigated.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Date:||24 June 1991|
|Number of Pages:||3|
|Page Range:||pp. 2933-2935|
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