A SILICON MBE-COMPATIBLE LOW-ENERGY ION IMPLANTER
UNSPECIFIED (1991) A SILICON MBE-COMPATIBLE LOW-ENERGY ION IMPLANTER. In: 8TH INTERNATIONAL CONF ON ION IMPLANTATION TECHNOLOGY, UNIV SURREY, GUILDFORD, ENGLAND, JUL 30-AUG 03, 1990. Published in: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 55 (1-4). pp. 314-317.Full text not available from this repository.
The design of an ion implanter for the doping of shallow layers grown by silicon molecular beam epitaxy to a concentration 10(20) cm-3 or higher is described. This requires a capability to deliver beams into the UHV growth chamber with ion energies in the range 500 eV down to 50 eV and lower, fluxes in the range 1 to 50-mu-A cm-2 and uniformity over a 100 mm diameter wafer. The instrument has been designed to operate simultaneously with the MBE growth process, without having to compromise the latter. The practical problems which arise from attaching to an existing silicon MBE installation in which the position, electrical potential and environment of the target are predetermined have also influenced the final design.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS|
|Publisher:||ELSEVIER SCIENCE BV|
|Official Date:||April 1991|
|Number of Pages:||4|
|Page Range:||pp. 314-317|
|Title of Event:||8TH INTERNATIONAL CONF ON ION IMPLANTATION TECHNOLOGY|
|Location of Event:||UNIV SURREY, GUILDFORD, ENGLAND|
|Date(s) of Event:||JUL 30-AUG 03, 1990|
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