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TEM OF SURFACE ALTERATIONS PRODUCED DURING SIMS ANALYSIS OF SILICON-WAFERS
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UNSPECIFIED (1989) TEM OF SURFACE ALTERATIONS PRODUCED DURING SIMS ANALYSIS OF SILICON-WAFERS. INSTITUTE OF PHYSICS CONFERENCE SERIES (100). pp. 519-524.
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Abstract
Oxygen ion bombardment for SIMS analysis produces an altered layer at the surface of a silicon sample. Transmission electron microscopy has been used to show that the layer is amorphous and typically 20 nm deep for normal incidence oxygen ions at 4.5 keV. Compositional variation within the layer is shown by the appearance of a Fresnel fringe at approximately two thirds of the depth but the interface with the crystalline silicon substrate is shown to be atomically sharp. A pile-up of As at the altered layer was found when profiling through a heavily As doped layer.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Journal or Publication Title: | INSTITUTE OF PHYSICS CONFERENCE SERIES | ||||
| Publisher: | IOP PUBLISHING LTD | ||||
| ISSN: | 0951-3248 | ||||
| Official Date: | 1989 | ||||
| Dates: |
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| Number: | 100 | ||||
| Number of Pages: | 6 | ||||
| Page Range: | pp. 519-524 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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