UNSPECIFIED (1989) TEM OF SURFACE ALTERATIONS PRODUCED DURING SIMS ANALYSIS OF SILICON-WAFERS. INSTITUTE OF PHYSICS CONFERENCE SERIES (100). pp. 519-524. ISSN 0951-3248

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Abstract

Oxygen ion bombardment for SIMS analysis produces an altered layer at the surface of a silicon sample. Transmission electron microscopy has been used to show that the layer is amorphous and typically 20 nm deep for normal incidence oxygen ions at 4.5 keV. Compositional variation within the layer is shown by the appearance of a Fresnel fringe at approximately two thirds of the depth but the interface with the crystalline silicon substrate is shown to be atomically sharp. A pile-up of As at the altered layer was found when profiling through a heavily As doped layer.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	INSTITUTE OF PHYSICS CONFERENCE SERIES
Publisher:	IOP PUBLISHING LTD
ISSN:	0951-3248
Date:	1989
Number:	100
Number of Pages:	6
Page Range:	pp. 519-524
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/22691

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