DIFFUSION THERMOPOWER OF A 2DEG
UNSPECIFIED (1991) DIFFUSION THERMOPOWER OF A 2DEG. JOURNAL OF PHYSICS-CONDENSED MATTER, 3 (15). pp. 2597-2602. ISSN 0953-8984Full text not available from this repository.
We investigate the effect of the background impurity concentration N(BI) on the thermopower of a GaAs/AlGaAs heterojunction. A comparison between a GaAs/AlGaAs heterojunction and a Si MOSFET is also given. For the heterojunction we always find a negative sign for the thermopower, in contrast to the Si MOSFET for which the sign sometimes changes with increasing N(BI). This different behaviour is due to the difference of the confining potentials of the two systems.
|Item Type:||Journal Item|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF PHYSICS-CONDENSED MATTER|
|Publisher:||IOP PUBLISHING LTD|
|Date:||15 April 1991|
|Number of Pages:||6|
|Page Range:||pp. 2597-2602|
Actions (login required)