UNSPECIFIED (1991) STRUCTURAL AND ELECTRICAL-PROPERTIES OF B-DELTA LAYERS IN SI. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 6 (3). pp. 227-228. ISSN 0268-1242

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Abstract

X-ray diffraction has been used to deduce the width and strain fields of an elemental boron delta layer in (100) Si grown by MBE. It is found to be < 1 nm thick and tetragonally distorted with a lattice contraction of 0.031 nm in the [100] direction. Hall measurements have been used to obtain the hole concentration in the layer and it is found that it is fully activated with a sheet carrier density of 3.5 x 10(14) cm-2, one of the highest values reported to date. Cross-sectional TEM analysis confirms that it is a near-ideal delta layer, with no precipitation evident.

Item Type:	Journal Item
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher:	IOP PUBLISHING LTD
ISSN:	0268-1242
Date:	March 1991
Volume:	6
Number:	3
Number of Pages:	2
Page Range:	pp. 227-228
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/22811

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