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STRUCTURAL AND ELECTRICAL-PROPERTIES OF B-DELTA LAYERS IN SI
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UNSPECIFIED (1991) STRUCTURAL AND ELECTRICAL-PROPERTIES OF B-DELTA LAYERS IN SI. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 6 (3). pp. 227-228. ISSN 0268-1242
Full text not available from this repository.Abstract
X-ray diffraction has been used to deduce the width and strain fields of an elemental boron delta layer in (100) Si grown by MBE. It is found to be < 1 nm thick and tetragonally distorted with a lattice contraction of 0.031 nm in the [100] direction. Hall measurements have been used to obtain the hole concentration in the layer and it is found that it is fully activated with a sheet carrier density of 3.5 x 10(14) cm-2, one of the highest values reported to date. Cross-sectional TEM analysis confirms that it is a near-ideal delta layer, with no precipitation evident.
| Item Type: | Journal Item |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
| Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
| Publisher: | IOP PUBLISHING LTD |
| ISSN: | 0268-1242 |
| Date: | March 1991 |
| Volume: | 6 |
| Number: | 3 |
| Number of Pages: | 2 |
| Page Range: | pp. 227-228 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/22811 |
Data sourced from Thomson Reuters' Web of Knowledge
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