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STRENGTH DEGRADATION OF GROUND AND ETCHED SI SURFACES
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UNSPECIFIED. (1990) STRENGTH DEGRADATION OF GROUND AND ETCHED SI SURFACES. INSTITUTE OF PHYSICS CONFERENCE SERIES (111). pp. 493-495. ISSN 0951-3248
Full text not available from this repository.Abstract
The design of a three point bending test machine for assessing the strength of small specimens is outined. Preliminary results are reported of the strength of sawn and ground silicon as a function of the surface depth removed by etching.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | INSTITUTE OF PHYSICS CONFERENCE SERIES |
| Publisher: | IOP PUBLISHING LTD |
| ISSN: | 0951-3248 |
| Date: | 1990 |
| Number: | 111 |
| Number of Pages: | 3 |
| Page Range: | pp. 493-495 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/22848 |
Data sourced from Thomson Reuters' Web of Knowledge
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