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EFFECT OF THE LANDAU-LEVEL BROADENING ON THE QUANTUM HALL CONDUCTANCE
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UNSPECIFIED (1991) EFFECT OF THE LANDAU-LEVEL BROADENING ON THE QUANTUM HALL CONDUCTANCE. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 13 (1). pp. 99-104. ISSN 0392-6737
Full text not available from this repository.Abstract
In a previous paper, Kliros et al. presented a model calculation of the Hall conductivity as a function of the Landau level broadening GAMMA for finite temperatures. In this paper, the effect of Landau-level broadening on the structure of the Hall conductivity is investigated. The experimental data regarding the Si-MOSFET and GaAs-heterostructure experiments are reproduced including a functional dependence of GAMMA on the magnetic field. The influence of the effective g-factor is considered as well.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS |
| Publisher: | EDITRICE COMPOSITORI BOLOGNA |
| ISSN: | 0392-6737 |
| Date: | January 1991 |
| Volume: | 13 |
| Number: | 1 |
| Number of Pages: | 6 |
| Page Range: | pp. 99-104 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/22866 |
Data sourced from Thomson Reuters' Web of Knowledge
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