UNSPECIFIED. (1991) ELEMENTAL BORON DOPING BEHAVIOR IN SILICON MOLECULAR-BEAM EPITAXY. APPLIED PHYSICS LETTERS, 58 (5). pp. 481-483. ISSN 0003-6951

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Abstract

Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2 x 10(20) cm-3, to elucidate profile control and electrical activation over the growth temperature range 450-900-degrees-C. Precipitation and surface segregation effects were observed at doping levels of 2 x 10(20) cm-3 for growth temperatures above 600-degrees-C. At growth temperatures below 600-degrees-C, excellent profile control was achieved with complete electrical activation at concentrations of 2 x 10(20) cm-3, corresponding to the optimal MBE growth conditions for a range of Si/Si(x)Ge1-x heterostructures.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	APPLIED PHYSICS LETTERS
Publisher:	AMER INST PHYSICS
ISSN:	0003-6951
Date:	4 February 1991
Volume:	58
Number:	5
Number of Pages:	3
Page Range:	pp. 481-483
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/22883

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