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ELEMENTAL BORON DOPING BEHAVIOR IN SILICON MOLECULAR-BEAM EPITAXY
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UNSPECIFIED. (1991) ELEMENTAL BORON DOPING BEHAVIOR IN SILICON MOLECULAR-BEAM EPITAXY. APPLIED PHYSICS LETTERS, 58 (5). pp. 481-483. ISSN 0003-6951
Full text not available from this repository.Abstract
Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2 x 10(20) cm-3, to elucidate profile control and electrical activation over the growth temperature range 450-900-degrees-C. Precipitation and surface segregation effects were observed at doping levels of 2 x 10(20) cm-3 for growth temperatures above 600-degrees-C. At growth temperatures below 600-degrees-C, excellent profile control was achieved with complete electrical activation at concentrations of 2 x 10(20) cm-3, corresponding to the optimal MBE growth conditions for a range of Si/Si(x)Ge1-x heterostructures.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | APPLIED PHYSICS LETTERS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 0003-6951 |
| Official Date: | 4 February 1991 |
| Volume: | 58 |
| Number: | 5 |
| Number of Pages: | 3 |
| Page Range: | pp. 481-483 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/22883 |
Data sourced from Thomson Reuters' Web of Knowledge
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