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ELEMENTAL BORON DOPING BEHAVIOR IN SILICON MOLECULAR-BEAM EPITAXY
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UNSPECIFIED (1991) ELEMENTAL BORON DOPING BEHAVIOR IN SILICON MOLECULAR-BEAM EPITAXY. APPLIED PHYSICS LETTERS, 58 (5). pp. 481-483.
Full text not available from this repository, contact author.Abstract
Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2 x 10(20) cm-3, to elucidate profile control and electrical activation over the growth temperature range 450-900-degrees-C. Precipitation and surface segregation effects were observed at doping levels of 2 x 10(20) cm-3 for growth temperatures above 600-degrees-C. At growth temperatures below 600-degrees-C, excellent profile control was achieved with complete electrical activation at concentrations of 2 x 10(20) cm-3, corresponding to the optimal MBE growth conditions for a range of Si/Si(x)Ge1-x heterostructures.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Journal or Publication Title: | APPLIED PHYSICS LETTERS | ||||
| Publisher: | AMER INST PHYSICS | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 4 February 1991 | ||||
| Dates: |
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| Volume: | 58 | ||||
| Number: | 5 | ||||
| Number of Pages: | 3 | ||||
| Page Range: | pp. 481-483 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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