THE EFFECT OF INTERFACE ROUGHNESS SCATTERING AND BACKGROUND IMPURITY SCATTERING ON THE THERMOPOWER OF A 2DEG IN A SI MOSFET
UNSPECIFIED (1990) THE EFFECT OF INTERFACE ROUGHNESS SCATTERING AND BACKGROUND IMPURITY SCATTERING ON THE THERMOPOWER OF A 2DEG IN A SI MOSFET. JOURNAL OF PHYSICS-CONDENSED MATTER, 2 (51). pp. 10401-10410. ISSN 0953-8984Full text not available from this repository.
For a 2DEG in a Si MOSFET the important scattering mechanisms at low temperatures are remote impurity, background impurity and interface roughness scattering. We perform a detailed calculation of the energy dependence of each scattering mechanism in the extreme quantum limit with a view to explaining the observed electron concentration dependence of the thermopower. For N(s) less than 8 X 10(15) m-2, scattering by remote impurities dominates. A change of sign of the diffusion thermopower is predicted at low T and high N(s), due to the dominance of scattering by background impurities and interface roughness. The total thermopower is calculated by including the phonon drag contribution, the result being in satisfactory agreement with experimental data.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF PHYSICS-CONDENSED MATTER|
|Publisher:||IOP PUBLISHING LTD|
|Date:||31 December 1990|
|Number of Pages:||10|
|Page Range:||pp. 10401-10410|
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