UNSPECIFIED (1990) THE EFFECT OF INTERFACE ROUGHNESS SCATTERING AND BACKGROUND IMPURITY SCATTERING ON THE THERMOPOWER OF A 2DEG IN A SI MOSFET. JOURNAL OF PHYSICS-CONDENSED MATTER, 2 (51). pp. 10401-10410. ISSN 0953-8984

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Abstract

For a 2DEG in a Si MOSFET the important scattering mechanisms at low temperatures are remote impurity, background impurity and interface roughness scattering. We perform a detailed calculation of the energy dependence of each scattering mechanism in the extreme quantum limit with a view to explaining the observed electron concentration dependence of the thermopower. For N(s) less than 8 X 10(15) m-2, scattering by remote impurities dominates. A change of sign of the diffusion thermopower is predicted at low T and high N(s), due to the dominance of scattering by background impurities and interface roughness. The total thermopower is calculated by including the phonon drag contribution, the result being in satisfactory agreement with experimental data.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	JOURNAL OF PHYSICS-CONDENSED MATTER
Publisher:	IOP PUBLISHING LTD
ISSN:	0953-8984
Date:	31 December 1990
Volume:	2
Number:	51
Number of Pages:	10
Page Range:	pp. 10401-10410
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/22913

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