UNSPECIFIED (1990) COMPTON-SCATTERING STUDIES OF THE VALENCE ELECTRON-DENSITY DISTRIBUTION IN GAAS. JOURNAL OF PHYSICS-CONDENSED MATTER, 2 (51). pp. 10517-10528. ISSN 0953-8984

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Abstract

Directional Compton profiles have been measured along the [100], [110], [111], [112] and [221] crystallographic axes in GaAs using 412 keV and 59.54 keV-gamma-radiation from Au-198 and Am-241 radioisotope sources, respectively. The results have been compared with the prediction of a pseudopotential calculation both in momentum space and in position space. The pseudopotential approach predicts the anisotropy of the valence electron distribution and is consistent with an increase in the ionic bond character compared with Ge. On the other hand, the total electron distributions are not well described due to the omission of core orthogonalisation terms.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	JOURNAL OF PHYSICS-CONDENSED MATTER
Publisher:	IOP PUBLISHING LTD
ISSN:	0953-8984
Date:	31 December 1990
Volume:	2
Number:	51
Number of Pages:	12
Page Range:	pp. 10517-10528
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/22914

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