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BEHAVIOR OF HIGH-DOSE O+-IMPLANTED SI/GE/SI STRUCTURES
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UNSPECIFIED. (1990) BEHAVIOR OF HIGH-DOSE O+-IMPLANTED SI/GE/SI STRUCTURES. APPLIED PHYSICS LETTERS, 57 (9). pp. 890-892. ISSN 0003-6951
Full text not available from this repository.| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | APPLIED PHYSICS LETTERS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 0003-6951 |
| Date: | 27 August 1990 |
| Volume: | 57 |
| Number: | 9 |
| Number of Pages: | 3 |
| Page Range: | pp. 890-892 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/23143 |
Data sourced from Thomson Reuters' Web of Knowledge
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