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P-TYPE-DELTA DOPING IN SILICON MBE

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UNSPECIFIED (1990) P-TYPE-DELTA DOPING IN SILICON MBE. In: 3RD INTERNATIONAL SYMP OF THE 1989 CONF OF THE EUROPEAN MATERIALS RESEARCH SOC : SILICON MOLECULAR BEAM EPITAXY, STRASBOURG, FRANCE, MAY 30-JUN 02, 1989. Published in: THIN SOLID FILMS, 184 pp. 15-19. ISSN 0040-6090.

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Item Type: Conference Item (UNSPECIFIED)
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Journal or Publication Title: THIN SOLID FILMS
Publisher: ELSEVIER SCIENCE SA LAUSANNE
ISSN: 0040-6090
Official Date: January 1990
Dates:
DateEvent
January 1990UNSPECIFIED
Volume: 184
Number of Pages: 5
Page Range: pp. 15-19
Publication Status: Published
Title of Event: 3RD INTERNATIONAL SYMP OF THE 1989 CONF OF THE EUROPEAN MATERIALS RESEARCH SOC : SILICON MOLECULAR BEAM EPITAXY
Location of Event: STRASBOURG, FRANCE
Date(s) of Event: MAY 30-JUN 02, 1989

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