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QUANTIFYING THE EFFECTS OF UNEVEN ETCHING DURING THE SIMS ANALYSIS OF PERIODIC DOPING STRUCTURES GROWN BY SILICON MBE
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UNSPECIFIED (1988) QUANTIFYING THE EFFECTS OF UNEVEN ETCHING DURING THE SIMS ANALYSIS OF PERIODIC DOPING STRUCTURES GROWN BY SILICON MBE. SURFACE AND INTERFACE ANALYSIS, 11 (1-2). pp. 80-87. ISSN 0142-2421
Full text not available from this repository.| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QD Chemistry |
| Journal or Publication Title: | SURFACE AND INTERFACE ANALYSIS |
| Publisher: | JOHN WILEY & SONS LTD |
| ISSN: | 0142-2421 |
| Date: | January 1988 |
| Volume: | 11 |
| Number: | 1-2 |
| Number of Pages: | 8 |
| Page Range: | pp. 80-87 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/24654 |
Data sourced from Thomson Reuters' Web of Knowledge
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