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QUANTIFYING THE EFFECTS OF UNEVEN ETCHING DURING THE SIMS ANALYSIS OF PERIODIC DOPING STRUCTURES GROWN BY SILICON MBE
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UNSPECIFIED (1988) QUANTIFYING THE EFFECTS OF UNEVEN ETCHING DURING THE SIMS ANALYSIS OF PERIODIC DOPING STRUCTURES GROWN BY SILICON MBE. SURFACE AND INTERFACE ANALYSIS, 11 (1-2). pp. 80-87. ISSN 0142-2421.
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Item Type: | Journal Article | ||||
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Subjects: | Q Science > QD Chemistry | ||||
Journal or Publication Title: | SURFACE AND INTERFACE ANALYSIS | ||||
Publisher: | JOHN WILEY & SONS LTD | ||||
ISSN: | 0142-2421 | ||||
Official Date: | January 1988 | ||||
Dates: |
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Volume: | 11 | ||||
Number: | 1-2 | ||||
Number of Pages: | 8 | ||||
Page Range: | pp. 80-87 | ||||
Publication Status: | Published |
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