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THE EFFECT OF SUBSTRATE-TEMPERATURE ON DEEP STATES IN MBE SILICON
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UNSPECIFIED (1987) THE EFFECT OF SUBSTRATE-TEMPERATURE ON DEEP STATES IN MBE SILICON. In: UNSPECIFIED.
Full text not available from this repository.| Item Type: | Conference Item (UNSPECIFIED) |
|---|---|
| Subjects: | Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) |
| Journal or Publication Title: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
| Publisher: | ELECTROCHEMICAL SOC INC |
| ISSN: | 0013-4651 |
| Date: | August 1987 |
| Volume: | 134 |
| Number: | 8B |
| Number of Pages: | 1 |
| Page Range: | C545-C545 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/24869 |
Data sourced from Thomson Reuters' Web of Knowledge
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