Phonon-scattering limitation of the metallic conductivity of a quasi-two-dimensional semiconductor structure
UNSPECIFIED (1986) Phonon-scattering limitation of the metallic conductivity of a quasi-two-dimensional semiconductor structure. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1 (1). pp. 58-62. ISSN 0268-1242Full text not available from this repository.
Boltzmann's equation is used to calculate the DC conductivity of electrons in a quantum well. Deformation potential scattering due to 3D acoustic phonons is considered. The relaxation-time approximation is shown to be inappropriate at low temperatures and a variational method is proposed. At very low temperatures inter-sub-band scattering is prohibited, the sub-bands become decoupled and the quantum size effects are frozen out. In this case the resistivity is found to have the Bloch-Gruneisen T-5 temperature dependence.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||SEMICONDUCTOR SCIENCE AND TECHNOLOGY|
|Publisher:||IOP PUBLISHING LTD|
|Number of Pages:||5|
|Page Range:||pp. 58-62|
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