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Phonon-scattering limitation of the metallic conductivity of a quasi-two-dimensional semiconductor structure

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UNSPECIFIED (1986) Phonon-scattering limitation of the metallic conductivity of a quasi-two-dimensional semiconductor structure. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1 (1). pp. 58-62.

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Abstract

Boltzmann's equation is used to calculate the DC conductivity of electrons in a quantum well. Deformation potential scattering due to 3D acoustic phonons is considered. The relaxation-time approximation is shown to be inappropriate at low temperatures and a variational method is proposed. At very low temperatures inter-sub-band scattering is prohibited, the sub-bands become decoupled and the quantum size effects are frozen out. In this case the resistivity is found to have the Bloch-Gruneisen T-5 temperature dependence.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Journal or Publication Title: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher: IOP PUBLISHING LTD
ISSN: 0268-1242
Official Date: July 1986
Dates:
DateEvent
July 1986UNSPECIFIED
Volume: 1
Number: 1
Number of Pages: 5
Page Range: pp. 58-62
Publication Status: Published

Data sourced from Thomson Reuters' Web of Knowledge

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