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Organopalladium catalyst on S-terminated GaAs(001)-(2×6) surface

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Konishi, Tomoya, Toujyou, Takashi, Ishikawa, Takuma, Bell, Gavin R. and Tsukamoto, Shiro. (2009) Organopalladium catalyst on S-terminated GaAs(001)-(2×6) surface. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, Vol.27 (No.5). pp. 2206-2208. ISSN 1071-1023

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Official URL: http://dx.doi.org/10.1116/1.3193687

Abstract

Organopalladium molecules, such as Pd(CH3COO)2 ({Pd}), immobilized on the S-terminated GaAs(001), termed GaAs–S–{Pd} have high catalytic activity and cycle durability in the Mizoroki–Heck reaction. It is thought that the presence of Ga–S bonds in the single atomic layer S-termination is essential for these catalytic properties despite the much higher thickness (~100 nm) of the {Pd} films. In this study, the authors demonstrate the retention of Ga–S bonds in ultrathin GaAs–S–{Pd} by using reflection high-energy electron diffraction and scanning tunneling microscopy (STM). The ultrathin GaAs–S–{Pd} was prepared by using a vapor-deposition technique. Deposited {Pd} was observed as ~1 nm dotlike structures with STM. The adsorption rate of {Pd} was also investigated.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Molecular beam epitaxy -- Research, Adsorption -- Research, Thin films -- Research, Surfaces (Physics), Surface chemistry
Journal or Publication Title:	Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
Publisher:	American Institute of Physics
ISSN:	1071-1023
Date:	September 2009
Volume:	Vol.27
Number:	No.5
Number of Pages:	3
Page Range:	pp. 2206-2208
Identification Number:	10.1116/1.3193687
Status:	Peer Reviewed
Access rights to Published version:	Open Access
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URI:	http://wrap.warwick.ac.uk/id/eprint/2655