Thomas, Stephen M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, Robert James Pascoe, Vellianitis, G. and Watling, J. R.. (2009) Improved effective mobility extraction in MOSFETs. Solid-State Electronics, Vol.53 (No.12). pp. 1252-1256. ISSN 0038-1101

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Abstract

The standard method of extracting carrier effective mobility from electrical measurements on MOSFETs is reviewed and the assumptions implicit in this method are discussed. A novel technique is suggested that corrects for the difference in drain bias during IV and CV measurements. It is further shown that the lateral field and diffusion corrections, which are both commonly neglected, in fact cancel. The effectiveness of the proposed technique is demonstrated by application to data measured on a quasi-planar SOI finFET at 300 K and 4 K.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Metal oxide semiconductor field-effect transistors -- Research, Electron mobility -- Research, Silicon-on-insulator technology -- Research, Electric fields -- Measurement
Journal or Publication Title:	Solid-State Electronics
Publisher:	Elsevier
ISSN:	0038-1101
Date:	December 2009
Volume:	Vol.53
Number:	No.12
Page Range:	pp. 1252-1256
Identification Number:	10.1016/j.sse.2009.09.014
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC), Seventh Framework Programme (European Commission) (FP7/2007-2013)
Grant number:	216171 (FP7)
References:	[1] Koomen, J., Solid State Electron., 16, 801, (1973) [2] Wang, J, Kistler, N., Woo, J., Viswanathan, C.R. IEEE Electron Device Letters, 15, 117, (1994) [3] Takagi, S., Toriumi, A., Iwase, M., Tango, H. IEEE Trans. Electron Devices, 41, 2357, (1994) [4] Kilchytska, V., Lederer, D., Collaert, N. et al. IEEE Electron Device Letters, 26, 749, (2005) [5] Ramos, J., Augendre, E., Kottantharayil, A. et al. Proc. Solid-State Integr.Circuit Technol.8, 72, (2006) [6] Huang, C. L., Faricelli, J. V. and Arora, N. D. IEEE Trans Electron Dev, 40, 1134, (1993) [7] Koga, J., Takagi, S., Toriumi, A., Int. Conf. Solid State Devices and Materials, 895, (1994) [8] Chow, P. D. and Wang, K. IEEE Trans Electron Dev, 33, 1299, (1986) [9] Schroder, D.K., “Semiconductor Material and Device Characterization (2nd Ed.)” Wiley, (1998) [10] Baccarani,G., Gnani,E., Gnudi,A., Reggiani,S., Rudan,M. Solid State Electronics, 52, 526, (2008) [11] Sodini, C. G., Ekstedt, T. W. and Moll, J. L. Solid State Electronics, 25, 833, (1982) [12] Zebrev, G.I., Gorbunov, M.S. Proc. MIEL (2006) [13] Dal, M.J.H., et al. VLSI Tech. Dig. 110, (2007) [14] Vellianitis, G., et al. IEDM, 681, (2007) [15] Zeitzoff, P. M., Young, C. D., Brown, G. A. and Kim, Y. IEEE Electron Device Letters, 24, 275, (2003) [16] Vasileska, D., Ahmed, S. S., Mannino, M., Matsudaira, A., Klimeck, G., Lundstrom, M. “Schred” doi: 10254/nanohub-r221.3, (2006) [17] Vasileska, D., Schroder, D. K. and Ferry, D.K. IEEE Trans. Electron Devices 44, 584, (1997) [18] Iyengar, V.V., et al. IEEE Trans Electron Dev, 54, 1177, (2007) [19] Kapila, G., Kaczer, B., Nackaerts, A., Collaert, N., Groeseneken, G. V. IEEE Electron Device Letters, 28, 232, (2007) [20] Kerber, A., Cartier, E., Ragnarsson, L. A., Rosmeulen, M., Pantisano, L., Degraeve, R., Kim, Y., Groeseneken, G. Symp. VLSI Tech. Dig. 159, (2003)
URI:	http://wrap.warwick.ac.uk/id/eprint/2719

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