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Transition from dynamic to static disorder in one-dimensional organic semiconductors

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Troisi, Alessandro and Cheung, David L.. (2009) Transition from dynamic to static disorder in one-dimensional organic semiconductors. Journal of Chemical Physics, Vol.131 (No.1). article no. 014703 . ISSN 0021-9606

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Official URL: http://dx.doi.org/10.1063/1.3167406

Abstract

A generic model Hamiltonian is proposed for the study of the transport in a quasi-one-dimensional semiconductor in the charge transport regime intermediate between dynamic localization and static localization due to structural disorder. This intermediate regime may be appropriate for many organic semiconductors, including polymers, discotic liquid crystals, and DNA. The dynamics of the charge carrier is coupled to classical Langevin oscillators whose spectral density can be adjusted to model experimental systems of interest. In the proposed model, the density of states is constant (at constant temperature) and the transition from dynamic to static disorder is controlled by a single parameter. This paper further clarifies that the density of states may not contain all the information needed to describe the charge transport in some materials.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
Divisions: Faculty of Science > Chemistry
Faculty of Science > Centre for Scientific Computing
Library of Congress Subject Headings (LCSH): Organic semiconductors, Polymers -- Electric properties, One-dimensional conductors
Journal or Publication Title: Journal of Chemical Physics
Publisher: American Institute of Physics
ISSN: 0021-9606
Date: 7 July 2009
Volume: Vol.131
Number: No.1
Number of Pages: 8
Page Range: article no. 014703
Identification Number: 10.1063/1.3167406
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/E03375X/1 (EPSRC)
URI: http://wrap.warwick.ac.uk/id/eprint/27644

Data sourced from Thomson Reuters' Web of Knowledge

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