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Surface electronic properties of Mg-doped InAlN alloys

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King, P. D. C., Veal, T. D. (Tim D.), Schaff, W. J. and McConville, C. F.. (2009) Surface electronic properties of Mg-doped InAlN alloys. Physica Status Solidi. B: Basic Solid State Physics, Vol.246 (No.6). pp. 1169-1172. ISSN 0370-1972

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Official URL: http://dx.doi.org/10.1002/pssb.200880766

Abstract

High resolution X-ray photomission spectroscopy is utilised - was inferred at an alloy composition of x=0.7. For Al rich to determine the variation in surface Fermi level pinning post - alloys, insulating samples resulted due to the difficulty of tion for Mg-doped c-plane In1Al1, N alloys with x >= 0.4. For p-type doping AlN and Al-rich alloys resulting in approxi-In-rich alloys, a transition from inversion to hole depletion, mately flat-band conditions, with little surface space-charge.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Journal or Publication Title: Physica Status Solidi. B: Basic Solid State Physics
Publisher: Wiley - V C H Verlag GmbH & Co. KGaA
ISSN: 0370-1972
Date: June 2009
Volume: Vol.246
Number: No.6
Number of Pages: 4
Page Range: pp. 1169-1172
Identification Number: 10.1002/pssb.200880766
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC), NCESS facility
Grant number: EP/C535553/1 (EPSRC), EP/E025722/1 (EPSRC)
URI: http://wrap.warwick.ac.uk/id/eprint/27714

Data sourced from Thomson Reuters' Web of Knowledge

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