Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3
King, P. D. C., Veal, T. D. (Tim D.), Fuchs, F., Wang, Ch. Y., Payne, D. J., Bourlange, A., Zhang, H., Bell, Gavin R., Cimalla, V., Ambacher, O., Egdell, R. G., Bechstedt, Friedhelm and McConville, C. F. (Chris F.). (2009) Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). pp. 205211-1. ISSN 1098-0121Full text not available from this repository.
Official URL: http://dx.doi.org/10.1103/PhysRevB.79.205211
The bulk and surface electronic structure of In2O3 has proved controversial, prompting the current combined experimental and theoretical investigation. The band gap of single-crystalline In2O3 is determined as 2.93 +/- 0.15 and 3.02 +/- 0.15 eV for the cubic bixbyite and rhombohedral polymorphs, respectively. The valence-band density of states is investigated from x-ray photoemission spectroscopy measurements and density-functional theory calculations. These show excellent agreement, supporting the absence of any significant indirect nature of the In2O3 band gap. Clear experimental evidence for an s-d coupling between In 4d and O 2s derived states is also observed. Electron accumulation, recently reported at the (001) surface of bixbyite material, is also shown to be present at the bixbyite (111) surface and the (0001) surface of rhombohedral In2O3.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics
Q Science > QD Chemistry
|Divisions:||Faculty of Science > Physics|
|Library of Congress Subject Headings (LCSH):||Density functionals, Energy gap (Physics), Indium compounds, Surface (Physics), X-ray photoelectron spectroscopy|
|Journal or Publication Title:||Physical Review B (Condensed Matter and Materials Physics)|
|Publisher:||American Physical Society|
|Number of Pages:||10|
|Page Range:||pp. 205211-1|
|Funder:||Engineering and Physical Sciences Research Council (EPSRC), Deutsche Forschungsgemeinschaft (DFG), Germany. Bundesministerium für Bildung und Forschung (BMBF)|
|Grant number:||EP/E031595/1 (EPSRC), EP/G004447/1 (EPSRC), GR/S94148 (EPSRC), EP/E025722/1 (EPSRC), Be1346/20-1 (DFG), 13N9669 (BMBF)|
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