Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3

Tools
- Tools
+ Tools

King, P. D. C., Veal, T. D. (Tim D.), Fuchs, F., Wang, Ch. Y., Payne, D. J., Bourlange, A., Zhang, H., Bell, Gavin R., Cimalla, V., Ambacher, O., Egdell, R. G., Bechstedt, Friedhelm and McConville, C. F. (Chris F.) (2009) Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). pp. 205211-1. doi:10.1103/PhysRevB.79.205211 ISSN 1098-0121.

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Official URL: http://dx.doi.org/10.1103/PhysRevB.79.205211

Request Changes to record.

Abstract

The bulk and surface electronic structure of In2O3 has proved controversial, prompting the current combined experimental and theoretical investigation. The band gap of single-crystalline In2O3 is determined as 2.93 +/- 0.15 and 3.02 +/- 0.15 eV for the cubic bixbyite and rhombohedral polymorphs, respectively. The valence-band density of states is investigated from x-ray photoemission spectroscopy measurements and density-functional theory calculations. These show excellent agreement, supporting the absence of any significant indirect nature of the In2O3 band gap. Clear experimental evidence for an s-d coupling between In 4d and O 2s derived states is also observed. Electron accumulation, recently reported at the (001) surface of bixbyite material, is also shown to be present at the bixbyite (111) surface and the (0001) surface of rhombohedral In2O3.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Density functionals, Energy gap (Physics), Indium compounds, Surface (Physics), X-ray photoelectron spectroscopy
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: May 2009
Dates:
DateEvent
May 2009Published
Volume: Vol.79
Number: No.20
Number of Pages: 10
Page Range: pp. 205211-1
DOI: 10.1103/PhysRevB.79.205211
Status: Peer Reviewed
Publication Status: Published
Funder: Engineering and Physical Sciences Research Council (EPSRC), Deutsche Forschungsgemeinschaft (DFG), Germany. Bundesministerium fΓΌr Bildung und Forschung (BMBF)
Grant number: EP/E031595/1 (EPSRC), EP/G004447/1 (EPSRC), GR/S94148 (EPSRC), EP/E025722/1 (EPSRC), Be1346/20-1 (DFG), 13N9669 (BMBF)

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us