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Large magnetoresistance of a dilute p-Si/SiGe/Si quantum well in a parallel magnetic field

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Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.) (2009) Large magnetoresistance of a dilute p-Si/SiGe/Si quantum well in a parallel magnetic field. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). article no. 205310. doi:10.1103/PhysRevB.79.205310 ISSN 1098-0121.

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Official URL: http://dx.doi.org/10.1103/PhysRevB.79.205310

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Abstract

We report the results of an experimental study of the magnetoresistance rho(xx) in two samples of p-Si/SiGe/Si with low carrier concentrations p=8.2x10(10) cm(-2) and p=2x10(11) cm(-2). The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-plane magnetic field B-parallel to against the current I: B-parallel to perpendicular to I and B-parallel to parallel to I. In the sample with the lowest density in the magnetic field range of 0-7.2 T, the temperature dependence of rho(xx) demonstrates the metallic characteristics (d rho(xx)/dT>0). However, at B-parallel to=7.2 T the derivative d rho(xx)/dT reverses the sign. Moreover, the resistance depends on the current orientation with respect to the in-plane magnetic field. At B-parallel to congruent to 13 T there is a transition from the dependence ln(Delta rho(xx)/rho(0))proportional to B-parallel to(2) to the dependence ln(Delta rho(xx)/rho(0))proportional to B-parallel to. The observed effects can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Semiconductors, Magnetoresistance, Silicon alloys, Germanium alloys, Quantum wells
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: May 2009
Dates:
DateEvent
May 2009Published
Volume: Vol.79
Number: No.20
Number of Pages: 5
Page Range: article no. 205310
DOI: 10.1103/PhysRevB.79.205310
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Rossiĭskiĭ fond fundamentalʹnykh issledovaniĭ [Russian Foundation of Basic Research] (RFBR), Rossiĭskai︠a︡ akademii︠a︡ nauk [Russian Academy of Sciences], National Science Foundation (U.S.) (NSF), Florida, United States. Dept. of Energy
Grant number: 08-02-00852 (RFBR), DMR-0084173 (RAS)

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