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Large magnetoresistance of a dilute p-Si/SiGe/Si quantum well in a parallel magnetic field
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Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.) (2009) Large magnetoresistance of a dilute p-Si/SiGe/Si quantum well in a parallel magnetic field. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). article no. 205310. doi:10.1103/PhysRevB.79.205310
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Official URL: http://dx.doi.org/10.1103/PhysRevB.79.205310
Abstract
We report the results of an experimental study of the magnetoresistance rho(xx) in two samples of p-Si/SiGe/Si with low carrier concentrations p=8.2x10(10) cm(-2) and p=2x10(11) cm(-2). The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-plane magnetic field B-parallel to against the current I: B-parallel to perpendicular to I and B-parallel to parallel to I. In the sample with the lowest density in the magnetic field range of 0-7.2 T, the temperature dependence of rho(xx) demonstrates the metallic characteristics (d rho(xx)/dT>0). However, at B-parallel to=7.2 T the derivative d rho(xx)/dT reverses the sign. Moreover, the resistance depends on the current orientation with respect to the in-plane magnetic field. At B-parallel to congruent to 13 T there is a transition from the dependence ln(Delta rho(xx)/rho(0))proportional to B-parallel to(2) to the dependence ln(Delta rho(xx)/rho(0))proportional to B-parallel to. The observed effects can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Semiconductors, Magnetoresistance, Silicon alloys, Germanium alloys, Quantum wells | ||||
| Journal or Publication Title: | Physical Review B (Condensed Matter and Materials Physics) | ||||
| Publisher: | American Physical Society | ||||
| ISSN: | 1098-0121 | ||||
| Official Date: | May 2009 | ||||
| Dates: |
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| Volume: | Vol.79 | ||||
| Number: | No.20 | ||||
| Number of Pages: | 5 | ||||
| Page Range: | article no. 205310 | ||||
| DOI: | 10.1103/PhysRevB.79.205310 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | Rossiĭskiĭ fond fundamentalʹnykh issledovaniĭ [Russian Foundation of Basic Research] (RFBR), Rossiĭskai︠a︡ akademii︠a︡ nauk [Russian Academy of Sciences], National Science Foundation (U.S.) (NSF), Florida, United States. Dept. of Energy | ||||
| Grant number: | 08-02-00852 (RFBR), DMR-0084173 (RAS) |
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