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Investigation of Si/4H-SiC hetero-junction growth and electrical properties
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Guy, O. J., Pérez-Tomás, Amador, Jennings, M. R., Lodzinski, M., Castaing, A., Mawby, P. A., Covington, James A., Wilks, S. P., Hammond, R., Connolly, D., Jones, S., Hopkins, J., Wilby, T., Rimmer, N., Baker, K., Conway, S. and Evans, S. (2009) Investigation of Si/4H-SiC hetero-junction growth and electrical properties. In: 7th European Conference on Silicon Carbide and Related Materials, Barcelona, Spain, September 07-11, 2008. Published in: Materials Science Forum, Vol.615-617 pp. 443-446. doi:10.4028/www.scientific.net/MSF.615-617.443 ISSN 1662-9752.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.6...
Abstract
This paper describes the growth and charactcrisation of Si/SiC heterojunction Structures. Heterojunction Structures are of interest for low on-resistance diodes and as potential solutions to fabricating SiC MOS devices with lower interface state densities. The formation of the Si/SiC heterojunction using Chemical Vapour Deposition (CVD), Molecular Beam Epitaxy (MBE), Electron Beam Evaporation under UHV conditions (EBE-UHV) and Layer Transfer (I-T) are reported. The physical nature of Si/SiC Structures has been investigated using scanning electron microscopy (SEM). Results of electrical characterisation of the Si/SiC heterojunctions, are also reported. Finally. thermal oxidation of a Si / SiC heterojunction structures has been performed. The C(V) characteristics of the resulting oxides are compared to conventional thermal oxides on SiC.
| Item Type: | Conference Item (Paper) | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) | ||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
| Series Name: | MATERIALS SCIENCE FORUM | ||||
| Journal or Publication Title: | Materials Science Forum | ||||
| Publisher: | Trans Tech Publications Ltd. | ||||
| ISSN: | 1662-9752 | ||||
| Editor: | PerezTomas, A and Godignon, P and Vellvehi, M and Brosselard, P | ||||
| Official Date: | 2009 | ||||
| Dates: |
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| Volume: | Vol.615-617 | ||||
| Number of Pages: | 4 | ||||
| Page Range: | pp. 443-446 | ||||
| DOI: | 10.4028/www.scientific.net/MSF.615-617.443 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Conference Paper Type: | Paper | ||||
| Title of Event: | 7th European Conference on Silicon Carbide and Related Materials | ||||
| Type of Event: | Conference | ||||
| Location of Event: | Barcelona, Spain | ||||
| Date(s) of Event: | September 07-11, 2008 |
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