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Quantum interference effects in p-Si1−xGex quantum wells
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Leadley, D. R. (David R.), Andrievskii, Vladimir V., 1944-, Berkutov, Igor B., Komnik, Yuri F., Hackbarth, T. and Mironov, Oleg A.. (2010) Quantum interference effects in p-Si1−xGex quantum wells. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 230-233. ISSN 0022-2291
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Official URL: http://dx.doi.org/10.1007/s10909-009-0120-8
Abstract
Quantum interference effects, such as weak localization and electronelectron interaction (EEI), have been investigated in magnetic fields up to 11 T for hole gases in a set of Si1−xGex quantum wells with 0.13 < x < 0.95. The temperature dependence of the hole phase relaxation time has been extracted from the magneto-resistance between 35 mK and 10 K. The spin-orbit effects that can be described within the Rashba model were observed in low magnetic fields. A quadratic negative magneto-resistance was observed in strong magnetic fields, due to the EEI effect. The hole-phonon scattering time was determined from hole overheating in a strong magnetic field.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Library of Congress Subject Headings (LCSH): | Quantum wells, Quantum interference -- Research, Silicon compounds, Germanium compounds, Electron-phonon interactions |
| Journal or Publication Title: | Journal of Low Temperature Physics |
| Publisher: | Springer New York LLC |
| ISSN: | 0022-2291 |
| Date: | 6 January 2010 |
| Volume: | Vol.159 |
| Number: | No.1-2 |
| Page Range: | pp. 230-233 |
| Identification Number: | 10.1007/s10909-009-0120-8 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
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| URI: | http://wrap.warwick.ac.uk/id/eprint/2813 |
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