The Library

Quantum interference effects in p-Si1−xGex quantum wells

Tools

Leadley, D. R., Andrievskii, V. V., Berkutov, Igor B., Komnik, Yuri F., Hackbarth, T. and Mironov, O. A.. (2010) Quantum interference effects in p-Si1−xGex quantum wells. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 230-233. ISSN 0022-2291

PDF
WRAP_Leadley_quantum_interferenceRHMF09_DRL.pdf - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (113Kb)

Official URL: http://dx.doi.org/10.1007/s10909-009-0120-8

Abstract

Quantum interference effects, such as weak localization and electronelectron interaction (EEI), have been investigated in magnetic fields up to 11 T for hole gases in a set of Si1−xGex quantum wells with 0.13 < x < 0.95. The temperature dependence of the hole phase relaxation time has been extracted from the magneto-resistance between 35 mK and 10 K. The spin-orbit effects that can be described within the Rashba model were observed in low magnetic fields. A quadratic negative magneto-resistance was observed in strong magnetic fields, due to the EEI effect. The hole-phonon scattering time was determined from hole overheating in a strong magnetic field.

Item Type:

Journal Article

Subjects:

Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Quantum wells, Quantum interference -- Research, Silicon compounds, Germanium compounds, Electron-phonon interactions

Journal or Publication Title:

Journal of Low Temperature Physics

Publisher:

Springer New York LLC

ISSN:

0022-2291

Official Date:

6 January 2010

Dates:

Date	Event
6 January 2010	Published

Volume:

Vol.159

Number:

No.1-2

Page Range:

pp. 230-233

Identification Number:

10.1007/s10909-009-0120-8

Status:

Peer Reviewed

Publication Status:

Published

Access rights to Published version:

Restricted or Subscription Access

References:

1. P.W.Anderson, E.Abrahams, T.V.Ramakrishnan, Phys. Rev. Lett. 43, 718
(1979).
2. B.I. Altshuler and A.G. Aronov: Electron - Electron Interaction in Disordered
Systems. Modern Problems in Condensed Matter Science. 10, A.L. Efros and
M.P. Pollak (eds), Amsterdam, North-Holland, 1 (1985).
3. B.L. Altshuler, A.G. Aronov, M.E. Gershenson, and Yu.V. Sharvin, Sov.
Sci. Rev. A9, Schur, Switzerland, Harwood Academic Publisher Gmbh, 223
(1987).
4. B.L. Altshuler, A.G. Aronov, A.I. Larkin, and D.E. Khmel’nitskii, Zh. Eksp.
Teor. Fiz. 81, 768 (1981) [Sov. Phys. JETP 54, 411 (1981)].
5. I.V. Gornyi and A.D. Mirlin, Phys. Rev. Letters, 90, 076801 (2003)
6. Yu. A. Bychkov and E. I. Rashba, Pis’ma Zh. Eksp. Teor. Fiz. 46, 66 (1984)
[JETP Lett. 39, 78 (1984)].
7. M. I. Dyakonov and V. I. Perrel. Zh. Eksp. Teor. Fiz. 60, 1954 (1971) [JETP
33, 1053 (1971)].
8. S. Hershfield and V. Ambegaokar, Phys. Rev. B 34, 2147 (1986).
9. D.R. Leadley, R.J. Nicholas, J.J. Harris and C.T. Foxon. Solid State Electronics
32, 1473 (1989)
10. V. Karpus. Fiz. Tekh. Poluprov. 20, 12, (1986) [Sov. Phys. Semicond. 20, 6,
(1986).