Leadley, D. R. (David R.), Andrievskii, V. V., Berkutov, Igor B., Komnik, Yuri F., Hackbarth, T. and Mironov, O. A. (2010) Quantum interference effects in p-Si1−xGex quantum wells. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 230-233. doi:10.1007/s10909-009-0120-8

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Abstract

Quantum interference effects, such as weak localization and electronelectron interaction (EEI), have been investigated in magnetic fields up to 11 T for hole gases in a set of Si1−xGex quantum wells with 0.13 < x < 0.95. The temperature dependence of the hole phase relaxation time has been extracted from the magneto-resistance between 35 mK and 10 K. The spin-orbit effects that can be described within the Rashba model were observed in low magnetic fields. A quadratic negative magneto-resistance was observed in strong magnetic fields, due to the EEI effect. The hole-phonon scattering time was determined from hole overheating in a strong magnetic field.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Quantum wells, Quantum interference -- Research, Silicon compounds, Germanium compounds, Electron-phonon interactions
Journal or Publication Title:	Journal of Low Temperature Physics
Publisher:	Springer New York LLC
ISSN:	0022-2291
Official Date:	6 January 2010
Dates:	Date Event 6 January 2010 Published
Volume:	Vol.159
Number:	No.1-2
Page Range:	pp. 230-233
DOI:	10.1007/s10909-009-0120-8
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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