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Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures

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Mironov, Oleg A., Goiran, M., Galibert, J., Kozlov, D. V., Ikonnikov, A. V., Spirin, K. E., Gavrilenko, V. I. (Vladimir Ivanovich), Isella, G., Kummer, M., von Känel, H., Drachenko, O., Helm, Manfred, Wosnitza, Joachim, 1959-, Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2010) Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 216-221. ISSN 0022-2291

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Official URL: http://dx.doi.org/10.1007/s10909-009-0147-x

Abstract

Cyclotron resonance has been observed in steady and pulsed magnetic fields from high conductivity holes in Ge quantum wells. The resonance positions, splittings and linewidths are compared to calculations of the hole Landau levels.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Cyclotron resonance -- Research, Quantum wells, Effective mass (Physics), Landau levels, Heterostructures, Energy levels (Quantum mechanics), Energy-band theory of solids
Journal or Publication Title: Journal of Low Temperature Physics
Publisher: Springer New York LLC
ISSN: 0022-2291
Date: April 2010
Volume: Vol.159
Number: No.1-2
Page Range: pp. 216-221
Identification Number: 10.1007/s10909-009-0147-x
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access
Funder: Laboratoire National des Champs Magnétiques Intenses de Toulouse (LNCMI-T), Rossiĭskiĭ fond fundamentalʼnykh issledovaniĭ [Russian Foundation for Basic Research] (RFFI), Rossiĭskai︠a︡ akademii︠a︡ nauk [Russian Academy of Sciences] (RAN)
Grant number: TSE6- 105 (LNCMI-T),
References: 1. R.J.H.Morris et al. Semicond. Sci. Technol. 19 L106 (2004). 2. B.R¨oßner, G.Isella and Hans von K¨anel Appl. Phys. Lett. 82, 754 (2003). 3. V.Ya.Aleshkin et al. Physics of the Solid State 46 130 (2004). 4. O.Drachenko et al. Phys. Rev. B 79, 073301 (2009). 5. R.Winkler, M.Merkler, T.Darnhofer, U.R¨ossler Phys.Rev.B 53, 10858 (1996). 6. B.R¨oßner, D.Chrastina, G.Isella, H.von K¨anel Appl.Phys.Lett. 84 3058 (2004) 7. B.R¨oßner et al. Semicond. Sci. Technol. 22 S191 (2007)
URI: http://wrap.warwick.ac.uk/id/eprint/2814

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