Buckle, L., Coomber, S. D., Ashley, T. (Timothy), Jefferson, Paul Harvey, Walker, David, 1978-, Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Thomas, Pam A.. (2009) Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications. Microelectronics Journal, Vol.40 (No.3 Sp. Iss. SI). pp. 399-402. ISSN 0026-2692

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Abstract

The addition of small amounts of nitrogen to III-V semiconductors leads to a large degree of band gap bowing, giving rise to band-gaps smaller than in the associated binary materials. The incorporation of active nitrogen has been previously demonstrated for InNxSb1-x (x <= 0.7%) and GaNxSb1-x (x <= 1.75%) material; however, the as-grown carrier concentrations precluded incorporation into a device structure. Here we report the reduction in the as-grown carrier concentration in InNSb by annealing, whilst retaining the active nitrogen content. FTIR absorption measurements show the first direct experimental evidence of narrowing of the InSb bandgap due to nitrogen incorporation. As an alternative route to defect reduction and device compatible material we report on the growth of Ga1-yInyNxSb1-x, with 0 <= y <= 30% and x = 1.6 +/- 0.2% and demonstrate near lattice matching of the material to GaSb. (C) 2008 Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Nitrides, Indium antimonide crystals, Nitrogen
Journal or Publication Title:	Microelectronics Journal
Publisher:	Elsevier Science BV
ISSN:	0026-2692
Date:	March 2009
Volume:	Vol.40
Number:	No.3 Sp. Iss. SI
Number of Pages:	4
Page Range:	pp. 399-402
Identification Number:	10.1016/j.mejo.2008.06.007
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Great Britain. Ministry of Defence. Electro-Magnetic Remote Sensing Defence Technology Centre (EMRS DTC)
Version or Related Resource:	Paper presented at: Workshop on Recent Advances on Low Dimensional Structures and Devices, Univ Nottingham, Nottingham, UK, April 07-09 2008
Conference Paper Type:	Paper
Type of Event:	Workshop
URI:	http://wrap.warwick.ac.uk/id/eprint/28197

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