The Library
Unintentional conductivity of indium nitride: transport modelling and microscopic origins
Tools
King, P. D. C., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.). (2009) Unintentional conductivity of indium nitride: transport modelling and microscopic origins. Journal of Physics: Condensed Matter, Vol.21 (No.17). Article no. 174201. ISSN 0953-8984
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1088/0953-8984/21/17/174201
Abstract
A three-region model for the high n-type conductivity in InN, including contributions from the bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel conduction analysis is used to show that this model can account for the carrier concentration and mobility variation with film thickness that has previously been determined from single-field Hall effect measurements. Microscopic origins for the donors in each region are considered, and the overriding tendency towards n-type conductivity is discussed in terms of the bulk band structure of InN.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Journal or Publication Title: | Journal of Physics: Condensed Matter |
| Publisher: | Institute of Physics Publishing Ltd. |
| ISSN: | 0953-8984 |
| Date: | 29 April 2009 |
| Volume: | Vol.21 |
| Number: | No.17 |
| Number of Pages: | 7 |
| Page Range: | Article no. 174201 |
| Identification Number: | 10.1088/0953-8984/21/17/174201 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) |
| Grant number: | EP/C535553/1 (EPSRC), EP/E031595/1 (EPSRC) |
| URI: | http://wrap.warwick.ac.uk/id/eprint/28203 |
Data sourced from Thomson Reuters' Web of Knowledge
Actions (login required)
![]() |
View Item |
Tools
Tools

