King, P. D. C., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2009) Unintentional conductivity of indium nitride: transport modelling and microscopic origins. Journal of Physics: Condensed Matter, Vol.21 (No.17). Article no. 174201. doi:10.1088/0953-8984/21/17/174201

Full text not available from this repository, contact author.

Request Changes to record.

Abstract

A three-region model for the high n-type conductivity in InN, including contributions from the bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel conduction analysis is used to show that this model can account for the carrier concentration and mobility variation with film thickness that has previously been determined from single-field Hall effect measurements. Microscopic origins for the donors in each region are considered, and the overriding tendency towards n-type conductivity is discussed in terms of the bulk band structure of InN.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	Journal of Physics: Condensed Matter
Publisher:	Institute of Physics Publishing Ltd.
ISSN:	0953-8984
Official Date:	29 April 2009
Dates:	Date Event 29 April 2009 Published
Volume:	Vol.21
Number:	No.17
Number of Pages:	7
Page Range:	Article no. 174201
DOI:	10.1088/0953-8984/21/17/174201
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	EP/C535553/1 (EPSRC), EP/E031595/1 (EPSRC)

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item