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Unintentional conductivity of indium nitride: transport modelling and microscopic origins
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King, P. D. C., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2009) Unintentional conductivity of indium nitride: transport modelling and microscopic origins. Journal of Physics: Condensed Matter, Vol.21 (No.17). Article no. 174201. doi:10.1088/0953-8984/21/17/174201 ISSN 0953-8984.
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Official URL: http://dx.doi.org/10.1088/0953-8984/21/17/174201
Abstract
A three-region model for the high n-type conductivity in InN, including contributions from the bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel conduction analysis is used to show that this model can account for the carrier concentration and mobility variation with film thickness that has previously been determined from single-field Hall effect measurements. Microscopic origins for the donors in each region are considered, and the overriding tendency towards n-type conductivity is discussed in terms of the bulk band structure of InN.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Journal of Physics: Condensed Matter | ||||
Publisher: | Institute of Physics Publishing Ltd. | ||||
ISSN: | 0953-8984 | ||||
Official Date: | 29 April 2009 | ||||
Dates: |
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Volume: | Vol.21 | ||||
Number: | No.17 | ||||
Number of Pages: | 7 | ||||
Page Range: | Article no. 174201 | ||||
DOI: | 10.1088/0953-8984/21/17/174201 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
Grant number: | EP/C535553/1 (EPSRC), EP/E031595/1 (EPSRC) |
Data sourced from Thomson Reuters' Web of Knowledge
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