Unintentional conductivity of indium nitride: transport modelling and microscopic origins
King, P. D. C., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.). (2009) Unintentional conductivity of indium nitride: transport modelling and microscopic origins. Journal of Physics: Condensed Matter, Vol.21 (No.17). Article no. 174201. ISSN 0953-8984Full text not available from this repository.
Official URL: http://dx.doi.org/10.1088/0953-8984/21/17/174201
A three-region model for the high n-type conductivity in InN, including contributions from the bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel conduction analysis is used to show that this model can account for the carrier concentration and mobility variation with film thickness that has previously been determined from single-field Hall effect measurements. Microscopic origins for the donors in each region are considered, and the overriding tendency towards n-type conductivity is discussed in terms of the bulk band structure of InN.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Journal of Physics: Condensed Matter|
|Publisher:||Institute of Physics Publishing Ltd.|
|Date:||29 April 2009|
|Number of Pages:||7|
|Page Range:||Article no. 174201|
|Access rights to Published version:||Restricted or Subscription Access|
|Funder:||Engineering and Physical Sciences Research Council (EPSRC)|
|Grant number:||EP/C535553/1 (EPSRC), EP/E031595/1 (EPSRC)|
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