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Unintentional conductivity of indium nitride: transport modelling and microscopic origins

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King, P. D. C., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2009) Unintentional conductivity of indium nitride: transport modelling and microscopic origins. Journal of Physics: Condensed Matter, Vol.21 (No.17). Article no. 174201. doi:10.1088/0953-8984/21/17/174201

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Official URL: http://dx.doi.org/10.1088/0953-8984/21/17/174201

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Abstract

A three-region model for the high n-type conductivity in InN, including contributions from the bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel conduction analysis is used to show that this model can account for the carrier concentration and mobility variation with film thickness that has previously been determined from single-field Hall effect measurements. Microscopic origins for the donors in each region are considered, and the overriding tendency towards n-type conductivity is discussed in terms of the bulk band structure of InN.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Journal or Publication Title: Journal of Physics: Condensed Matter
Publisher: Institute of Physics Publishing Ltd.
ISSN: 0953-8984
Official Date: 29 April 2009
Dates:
DateEvent
29 April 2009Published
Volume: Vol.21
Number: No.17
Number of Pages: 7
Page Range: Article no. 174201
DOI: 10.1088/0953-8984/21/17/174201
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/C535553/1 (EPSRC), EP/E031595/1 (EPSRC)

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