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Charge transport in semiconductors with multiscale conformational dynamics

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Troisi, Alessandro, Cheung, David L. and Andrienko, Denis (2009) Charge transport in semiconductors with multiscale conformational dynamics. Physical Review Letters, Vol.102 (No.11). article no.116602 . doi:10.1103/PhysRevLett.102.116602 ISSN 0031-9007.

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Official URL: http://dx.doi.org/10.1103/PhysRevLett.102.116602

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Abstract

In partially ordered organic semiconductors, the characteristic times of nuclear motion are comparable to those of charge carrier dynamics. It is impossible to describe charge transport using either static disorder models or temperature averaged electronic Hamiltonians. We build a model Hamiltonian which allows the study of charge transport whenever carrier and nuclear dynamics are not easily separable. Performing nanoseconds long molecular dynamics of a columnar mesophase of a discotic liquid crystal and evaluating electronic couplings, we identify realistic parameters of the Hamiltonian. All modes which are coupled to the electron dynamics can be described in the model Hamiltonian by a limited number of Langevin oscillators. This method can be applied to systems with both slow (nanoseconds) and fast (hundreds of femtoseconds) nuclear motions, i.e., with both dynamic and static disorder.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
Divisions: Faculty of Science, Engineering and Medicine > Science > Chemistry
Faculty of Science, Engineering and Medicine > Science > Centre for Scientific Computing
Library of Congress Subject Headings (LCSH): Charge transfer, Organic semiconductors, Hamiltonian operator, Molecular dynamics -- Simulation methods
Journal or Publication Title: Physical Review Letters
Publisher: American Physical Society
ISSN: 0031-9007
Official Date: 20 March 2009
Dates:
DateEvent
20 March 2009Published
Volume: Vol.102
Number: No.11
Number of Pages: 4
Page Range: article no.116602
DOI: 10.1103/PhysRevLett.102.116602
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Deutsche Forschungsgemeinschaft (DFG), Engineering and Physical Sciences Research Council (EPSRC)
Grant number: AN 680/1-1 (DFG)

Data sourced from Thomson Reuters' Web of Knowledge

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