King, P. D. C., Veal, T. D. (Tim D.), Jefferson, P. H., Zuniga-Perez, J., Munoz-Sanjose, V. and McConville, C. F. (Chris F.) (2009) Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.3). Article: 035203. doi:10.1103/PhysRevB.79.035203 ISSN 1098-0121.

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Abstract

In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in n-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	Physical Review B (Condensed Matter and Materials Physics)
Publisher:	American Physical Society
ISSN:	1098-0121
Official Date:	January 2009
Dates:	Date Event January 2009 Published
Volume:	Vol.79
Number:	No.3
Number of Pages:	5
Page Range:	Article: 035203
DOI:	10.1103/PhysRevB.79.035203
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC), Spanish Government
Grant number:	EP/E010210/1 (EPSRC), EP/G004447/1 (EPSRC), EP/E025722/1 (EPSRC), MAT2007-66129

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