Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO
King, P. D. C., Veal, T. D. (Tim D.), Jefferson, P. H., Zuniga-Perez, J., Munoz-Sanjose, V. and McConville, C. F. (Chris F.). (2009) Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.3). Article: 035203. ISSN 1098-0121Full text not available from this repository.
Official URL: http://dx.doi.org/10.1103/PhysRevB.79.035203
In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in n-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Physical Review B (Condensed Matter and Materials Physics)|
|Publisher:||American Physical Society|
|Number of Pages:||5|
|Page Range:||Article: 035203|
|Access rights to Published version:||Restricted or Subscription Access|
|Funder:||Engineering and Physical Sciences Research Council (EPSRC), Spanish Government|
|Grant number:||EP/E010210/1 (EPSRC), EP/G004447/1 (EPSRC), EP/E025722/1 (EPSRC), MAT2007-66129|
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