King, P. D. C., Veal, T. D. (Tim D.), Gallinat, C. S., Koblmueller, G., Bailey, L. R. (Laura R.), Speck, James S. and McConville, C. F. (Chris F.). (2008) Influence of growth conditions and polarity on interface-related electron density in InN. Journal of Applied Physics, Vol.104 (No.10). ISSN 0021-8979

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Abstract

Electron accumulation at the oxidized surface of In- and N-polarity indium nitride is shown to exhibit no dependence on the growth conditions (varied from In- to N-rich), revealing the surface Fermi level to be pinned 1.4 +/- 0.1 eV above the valence band maximum for all cases. This is in contrast to the interpretation of recent multiple-field Hall effect measurements, which suggested almost an order of magnitude increase in the sheet density of the accumulation layer upon moving from In-rich to N-rich growth conditions, and sample thickness dependent single-field Hall effect measurements which suggested different surface sheet densities for In- and N-polarity samples. However, an increase in the electron density approaching the InN/GaN (buffer layer) interface was not considered in the analysis of these Hall effect measurements, and this is invoked here to reconcile the constant surface Fermi level with the variations in "excess" sheet density observed in the previous Hall effect studies.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics Q Science > QD Chemistry
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Fermi surfaces, Gallium compounds, Hall effect, Semiconductors, Indium compounds, Semiconductor films, Valence (Theoretical chemistry), Wide gap semiconductors
Journal or Publication Title:	Journal of Applied Physics
Publisher:	American Institute of Physics
ISSN:	0021-8979
Official Date:	15 November 2008
Volume:	Vol.104
Number:	No.10
Number of Pages:	5
Identification Number:	10.1063/1.3020528
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC), Daresbury Laboratory, United States. Air Force. Office of Scientific Research, University of California, Santa Barbara. Center for Nanoscience Innovation for Defense (CNID), National Science Foundation (U.S.) (NSF)
Grant number:	EP/C535553/1 (EPSRC), EP/E025722/1 (EPSRC)
URI:	http://wrap.warwick.ac.uk/id/eprint/28681

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