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Band bending at the surfaces of In-rich InGaN alloys
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Bailey, L. R. (Laura R.), Veal, T. D. (Tim D.), King, P. D. C., McConville, C. F. (Chris F.), Pereiro, J., Grandal, J., Sanchez-Garcia, M. A., Munoz, E. and Calleja, E.. (2008) Band bending at the surfaces of In-rich InGaN alloys. Journal of Applied Physics, Vol.104 (No.11). ISSN 0021-8979
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Official URL: http://dx.doi.org/10.1063/1.3033373
Abstract
The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1-xN alloys with a composition range of 0.39 <= x <= 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical absorption spectroscopies, and solutions of Poisson's equation within a modified Thomas-Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0 x 10(12) to 1.5 x 10(13) cm(-2). The downward band bending is more pronounced in the most In-rich InGaN samples, resulting in larger near-surface electron concentrations. c 2008 American Institute of Physics. [DOI: 10.1063/1.3033373]
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Library of Congress Subject Headings (LCSH): | Surfaces (Physics), Alloys, Semiconductors, Gallium compounds, Indium compounds |
| Journal or Publication Title: | Journal of Applied Physics |
| Publisher: | American Institute of Physics |
| ISSN: | 0021-8979 |
| Date: | 1 December 2008 |
| Volume: | Vol.104 |
| Number: | No.11 |
| Number of Pages: | 6 |
| Identification Number: | 10.1063/1.3033373 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), Madrid (Spain : Region), Seventh Framework Programme (European Commission) (FP7) |
| Grant number: | EP/E031595/1 (EPSRC), S-0505/AMB/0374 (Madrid) |
| URI: | http://wrap.warwick.ac.uk/id/eprint/28716 |
Data sourced from Thomson Reuters' Web of Knowledge
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