Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Band bending at the surfaces of In-rich InGaN alloys

Tools
- Tools
+ Tools

Bailey, L. R. (Laura R.), Veal, T. D. (Tim D.), King, P. D. C., McConville, C. F. (Chris F.), Pereiro, J., Grandal, J., Sanchez-Garcia, M. A., Munoz, E. and Calleja, E. (2008) Band bending at the surfaces of In-rich InGaN alloys. Journal of Applied Physics, Vol.104 (No.11). doi:10.1063/1.3033373

Research output not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1063/1.3033373

Request Changes to record.

Abstract

The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1-xN alloys with a composition range of 0.39 <= x <= 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical absorption spectroscopies, and solutions of Poisson's equation within a modified Thomas-Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0 x 10(12) to 1.5 x 10(13) cm(-2). The downward band bending is more pronounced in the most In-rich InGaN samples, resulting in larger near-surface electron concentrations. c 2008 American Institute of Physics. [DOI: 10.1063/1.3033373]

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Surfaces (Physics), Alloys, Semiconductors, Gallium compounds, Indium compounds
Journal or Publication Title: Journal of Applied Physics
Publisher: American Institute of Physics
ISSN: 0021-8979
Official Date: 1 December 2008
Dates:
DateEvent
1 December 2008Published
Volume: Vol.104
Number: No.11
Number of Pages: 6
DOI: 10.1063/1.3033373
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC), Madrid (Spain : Region), Seventh Framework Programme (European Commission) (FP7)
Grant number: EP/E031595/1 (EPSRC), S-0505/AMB/0374 (Madrid)

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us