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Enhanced n-type dopant solubility in tensile-strained Si
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Bennett, N. S., Radamson, H. H., Beer, C. S., Smith, A. J., Gwilliam, R. M., Cowern, Nicholas E. B. and Sealy, B. J. (2008) Enhanced n-type dopant solubility in tensile-strained Si. Thin Solid Films, Vol.517 (No.1). pp. 331-333. doi:10.1016/j.tsf.2008.08.072 ISSN 0040-6090.
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Official URL: http://dx.doi.org/10.1016/j.tsf.2008.08.072
Abstract
The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a contender to replace As in strain-engineered CMOS devices due to advantages in sheet resistance. While strain reduces resistance for both As and Sb; a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall measurements suggest this is a consequence of a strain-induced Sb solubility enhancement following solid-phase epitaxial regrowth, increasing Sb solubility in Si to levels approaching 10(21) cm(-3). Experiments highlight the importance of maintaining substrate strain during thermal annealing to maintain this high Sb activation. (c) 2008 Elsevier B.V. All rights reserved.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics Q Science > QD Chemistry |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Antimony, Arsenic, Hall effect, Ion implantation, Epitaxy, Silicon -- Electric properties | ||||
Journal or Publication Title: | Thin Solid Films | ||||
Publisher: | Elsevier S.A. | ||||
ISSN: | 0040-6090 | ||||
Official Date: | 3 November 2008 | ||||
Dates: |
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Volume: | Vol.517 | ||||
Number: | No.1 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 331-333 | ||||
DOI: | 10.1016/j.tsf.2008.08.072 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
Data sourced from Thomson Reuters' Web of Knowledge
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