Bennett, N. S., Radamson, H. H., Beer, C. S., Smith, A. J., Gwilliam, R. M., Cowern, Nicholas E. B. and Sealy, B. J. (2008) Enhanced n-type dopant solubility in tensile-strained Si. Thin Solid Films, Vol.517 (No.1). pp. 331-333. doi:10.1016/j.tsf.2008.08.072

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Abstract

The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a contender to replace As in strain-engineered CMOS devices due to advantages in sheet resistance. While strain reduces resistance for both As and Sb; a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall measurements suggest this is a consequence of a strain-induced Sb solubility enhancement following solid-phase epitaxial regrowth, increasing Sb solubility in Si to levels approaching 10(21) cm(-3). Experiments highlight the importance of maintaining substrate strain during thermal annealing to maintain this high Sb activation. (c) 2008 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics Q Science > QD Chemistry
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Antimony, Arsenic, Hall effect, Ion implantation, Epitaxy, Silicon -- Electric properties
Journal or Publication Title:	Thin Solid Films
Publisher:	Elsevier S.A.
ISSN:	0040-6090
Official Date:	3 November 2008
Dates:	Date Event 3 November 2008 Published
Volume:	Vol.517
Number:	No.1
Number of Pages:	3
Page Range:	pp. 331-333
DOI:	10.1016/j.tsf.2008.08.072
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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