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Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well
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Myronov, Maksym, Shiraki, Y., Mouri, T. and Itoh, K. M. (2008) Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well. Thin Solid Films, Vol.517 (No.1). pp. 359-361. doi:10.1016/j.tsf.2008.08.061 ISSN 0040-6090.
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Official URL: http://dx.doi.org/10.1016/j.tsf.2008.08.061
Abstract
Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 mu S, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities. (C) 2008 Elsevier B.V. All rights reserved.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Quantum wells, Germanium, Electron mobility | ||||
Journal or Publication Title: | Thin Solid Films | ||||
Publisher: | Elsevier S.A. | ||||
ISSN: | 0040-6090 | ||||
Official Date: | 3 November 2008 | ||||
Dates: |
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Volume: | Vol.517 | ||||
Number: | No.1 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 359-361 | ||||
DOI: | 10.1016/j.tsf.2008.08.061 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Funder: | Japan. Monbu Kagakushō [Japan. Ministry of Education, Culture, Sports, Science and Technology] (MEXT), Nihon Gakujutsu Shinkōkai [Japan Society for the Promotion of Science] (JSPS) | ||||
Grant number: | 18760019 (JSPS) |
Data sourced from Thomson Reuters' Web of Knowledge
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